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S8673 S8673 is a one-dimensional psd with a 1.0 3.0 mm active area, molded into a sip (single inline package). features l thin, miniature plastic package (sip style) l active area: 1.0 3.0 mm (resistance length 3.0 mm) applications l optical switches l displacement meters psd one-dimensional psd one-dimensional psd using sip (single inline package) ! "# $ % "# # & ' ( %% )*+ ,- + .!, /01 &' .%23 4% 4( 5 6' &' .% % %$ %! ) 7)' 6 .% % / ' 88' 86 %% 0"# .%2 .%) .- ( 5 ''' # .%28.%)9: % ( ; + ' 6 .%2 .%) ( 5/ 36+<=8 +' 8+' +& 1 one-dimensional psd S8673 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?00 2 hamamatsu photonics k.k. cat. no. kpsd1024e01 jan. 2002 dn spectral response rise time vs. reverse voltage position detection characteristic example dimensional outline (unit: mm) (typ. ta=25 ?c) 200 400 800 1000 1200 wavelength (nm) photo sensitivity (a/w) 0.4 0.2 0 0.6 0.3 0.1 0.5 600 qe = 100 % position on psd (mm) 0 -2 +2 (typ. ta=25 ? c) -1 +1 80 0 20 40 60 -20 -40 -60 -80 -2 -1 0 +1 +2 position on psd (mm) 0 0.5 1.0 relative photocurrent position detection error (m) i 2 i 1 reverse voltage (v) (typ. ta=25 ? c) rise time (s) 1 0.1 0 10 4 8 2 6 10 100 =890 nm =650 nm 4.7 * 1.8 0.5 0.8 0.25 5.0 max. (including burr) 4.2 0.2 (including burr) (1.25) (0.8) 4.0 * 10 ? 5 ? 4.9 0.25 1.27 4.7 * 4.8 * 5.0 max. (including burr) anode 1 cathode (common) anode 2 tolerance unless otherwise noted: 0.1, 2 ? shaded area indicates burr. chip position accuracy with respect to the package dimensions marked * x, y 0.2, 2 ? 1.27 10 ? 5 ? 0.4 0.5 kpsdb0106ea kpsda0061ea kpsdb0104ea kpsdb0105ea 2 |
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