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| savantic semiconductor product specification silicon npn power transistors BUV70 d escription with to-3pn package high breakdown voltage fast switching speed wide area of safe operation applications for switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1300 v v ceo collector-emitter voltage open base 550 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i b base current 4 a p c collector power dissipation t c =25 140 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUV70 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;i b =0 550 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 2.0 v v besat base-emitter saturation voltage i c =6a; i b =1.2a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe dc current gain i c =3.2a ; v ce =2v 5 f t transition frequency i c =0.5a ; v ce =10v 9 mhz savantic semiconductor product specification 3 silicon npn power transistors BUV70 package outline fig.2 outline dimensions |
Price & Availability of BUV70
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