IRFF310 n-channel mosfet. v dss = 400v i d = 1.25a r ds(on) = 3.6 ? ? ? ? all semelab hermetically sealed products can be processed in accordance with the requirements of bs, cecc and jan, jantx, jantxv and jans specifications. parameter min. typ. max. units v dss drain ? source breakdown voltage 400 v i d continuous drain current 1.25 a p d power dissipation 15 w r ds(on) static drain ? source on?state resistance 3.6 ? c iss input capacitance 170 pf q g total gate charge 8.4 nc t td(on) turn?on delay time 15 ns t tr rise time 20 ns t td(off) turn?off delay time 35 ns t f fall time 30 ns this is a shortform datasheet. for a full datasheet please contact sales@semelab.co.u k . semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. generated 11-oct-02 to39 (to205af) pinouts 1 ? source 2 ? gate 3 - drain n-channel mosfet in a hermetically sealed to39 metal package. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk dimensions in mm (inches). 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3
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