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| 2N5781 silicon epitaxial pnp transistor general-purpose types for switching and linear-amplifier applications features ? low saturation voltages ? maximum safe area of operation curves ? high gain at high current ? high breakdown voltages v cbo collector ? base voltage v cer(br) collector ? emitter breakdown voltage r be = 100 v ceo(br) collector ? emitter breakdown voltage v ebo emitter ? base voltage i c continuous collector current i b continuous base current p t total device dissipation at case temperatures up to = 25c at ambient temperatures up to = 25c t j , t stg operating junction and storage temperature range -80v -80v -65v -5v -3.5a -1a 10w 1w ?65 to +200c mechanical data dimensions in mm (inches) to39 (to205ad) package absolute maximum ratings (t a = 25c unless otherwise stated) pin 1 ? emitter pin 2 ? base pin 3 ? case 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) the 2N5781 is intended for medium-power switching and complementary-symmetry audio amplifier applications. semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 6659 issue 1
2N5781 parameter test conditions min. typ. max. unit a ma a ma a a ? v v mhz ? s c/w - 10 - 1.0 - 10 - 1.0 - 100 - 10 20 100 4 - 65 - 80 - 1.5 - 0.5 860 25 0.5 2.5 17.5 175 i cer collector cut-off current i cex collector cut-off current i ceo collector cut-off current i ebo emitter cut-off current h fe* dc current gain v ceo(br)* collector ? emitter breakdown voltage v cer(br)* collector ? emitter breakdown voltage v be base ? emitter voltage v ce(sat) collector ? emitter saturation voltage f t transition frequency h fe small signal common ? emitter current gain t on saturated switching time t off turn-off time r jc thermal resistance junction ? case r ja thermal resistance junction ? ambient v ce = -65v r be = 100 t c = 150c v ce = - 75v v be = -1.5v r be = 100 t c = 150c v ce = -50v i b = 0 v be = - 5v i c = 0 v ce = -2v i c = -1.0a v ce = -2v i c = -3.2a i c =- 10ma i b = 0 i c = -10ma r be = 100 v ce = -2v i c = -1.0a i c = -1.0a i b = - 0.1a v ce = - 2v i c = - 0.1a f = 4mhz v ce = -2v i c = -0.1ma f = 1.0khz v cc = -30v i b1 = i b2 i c = -1.0a i b = - 0.1a notes 1. * pulse test: t p = 300 s, = 1.8%. electrical characteristics (t c = 25c unless otherwise stated) semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 6659 issue 1 |
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