? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v gs continuous 20 v i d25 t c = 25 c 25a i d90 t c = 90 c 9 a i d(rms) package lead current limit 45 a e as i o = 10a, t c = 25 c 690 mj e ar i o = 20a 0.5 mj dv/dt v ds < v dss , i f 17 a, t vj = 150 c 6 v/ns d ir /dt = 100 a/ s p d t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +125 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol rms leads-to-tab, 50/60 hz, t = 1 minute 2500 v~ m d mounting torque 0.9 / 6 nm/lb-in weight 8 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. r ds(on) v gs = 10 v, i d = i d90 , note 1 126 150 m ? v gs = 10 v, i d = i d90 , note 1 t j = 125 c 297 m ? v gs(th) v ds = v gs , i d = 2 ma 2 4 v i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c10 a i gss v gs = 20 v dc , v ds = 0 200 na g = gate, d = drain, s = source * patent pending v dss = 800 v i d25 = 25 a r ds(on) = 150 m ? ? ? ? ? ds99099(10/03) advance technical information features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z 3 rd generation coolmos power mosfet - high blocking capability - low on resistance - avalanche rated for unclamped inductive switching (uis) z low thermal resistance due to reduced chip thickness z low drain to tab capacitance(<40pf) applications z switched mode power supplies (smps) z uninterruptible power supplies (ups) z power factor correction (pfc) z welding z inductive heating advantages z easy assembly z space savings z high power density coolmos tm power mosfet iso264 tm electrically isolated back surface n-channel enhancement mode low r ds(on) , high voltage mosfet ixkg 25n80c coolmos is a trademark of infineon technology. iso264 tm s g d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 symbol test conditions ch aracteristic values (t j = 25 c, unless otherwise specified) min. typ. max. q g(on) 166 nc q gs v gs = 10 v, v ds = 640 v, i d = 17 a 18 nc q gd 84 nc t d(on) 25 ns t r v gs = 10 v, v ds = 640v 25 ns t d(off) i d = 35 a, r g = 2.2 ? 75 ns t f 10 ns r thjc 0.5 k/w r thch 0.30 k/w reverse conduction characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd i f = 12.5 a, v gs = 0 v 1 1.2 v note 1 note: 1. pulse test, t 300 s, duty cycle d 2 % ixkg 25n80c iso264 outline 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - no connection ?
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