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| any changing of specification will not be informed individua SCS521S schottky barrier diode http://www.secosgmbh.com ele k troni sche bauelemente 1.60.1 1.20.05 0.80.05 cathode mark 0.60.1 0.120.05 sod-523 0.30.05 c dimensions in millimeters ma ximum r a ting s (t j = 25 c unless otherwise noted) rating symbol v alue unit dc reverse voltage v r 30 v olts mean rectifying current i o ma peak forward surge current i f sm a junction t emperature t j 125 c storage t emperature range t stg 40 to +125 c 200 1 electrica l characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min ty p max unit forward voltage ( = 200ma) v f 0.50 v olts reverse current ( v = 10v) i r 30 i f r m a l f f features extremely small surface mounting type. (emd2) . io=200ma guaranteed despite the size. silicon epitaxial planer low v .(v =0.40v typ. at 200ma) mechanical data . . . . low current rectification and high speed switching 0 1 - j u l - 2 0 0 9 r e v . b p a g e 1 o f 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
http://www.secosgmbh.com ele k troni sche bauelemente c 5 2 - 1m 10m 100m 1m 10m 100m 1 for w ard current : i f (a) for w ard v ol t a ge : v f (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 01 0 2 0 3 0 ta = 125 c 75 c 25 c -25 c c 5 2 1 a t c 5 7 c 5 2 figure 1. forward characteristics 10n 100n 1 10 100 1m 10m reverse current : i r (a) reverse v ol t a ge : v r (v) figure 2. reverse characteristics 0 2468 1 0 1 2 1 4 1 2 5 10 20 50 100 f=1mhz ta=25 c reverse voltage : v r ( v) capacitance between terminals : c t ( pf) fig. 3 capacitance between terminals characteristics 0 0 20 40 60 80 100 25 50 75 100 125 io current (%) ambient temperature : ta ( c) fig. 4 derating curve (mounting on glass epoxy pcbs) m m m SCS521S schottky barrier diode any changing of specification will not be informed individua l e l e c t r ic a l ch a r ac t e r i s t i c c u r v e s ( t a = 2 5 c) 01 -jul-2009 rev. a page 2 of 2 |
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