smd type ic www.kexin.com.cn 1 smd type transistors 250v n-channel enhancement mode mosfet KVN4525E6 1pinmark unit: mm features high voltage low on-resistance fast switching speed low gate drive low threshold absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v dss 250 v gate source voltage v gs 40 v continuous drain current (v gs =10v; t a =25 )*1 i d 230 ma (v gs =10v; t a =70 )*1 i d 183 ma pulsed drain current *3 i dm a continuous source current (body diode) i s 1.1 a pulsed source current (body diode) i sm 1.44 a power dissipation at t a =25 *1 1.1 w linear derating factor 8.8 mw/ operating and storage temperature range t j :t stg -55to+150 junction to ambient*1 r ja 113 /w junction to ambient*2 r ja 65 /w *1 for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions *2foradevicesurfacemountedonfr4pcbmeasuredatt 5 secs. *3 repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal p d
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v (br)dss i d =1ma, v gs =0v 250 285 v zero gate voltage drain current i dss v ds =250v, v gs =0v 35 500 na gate-body leakage i gss v gs = 40v, v ds =0v 1 100 na gate-source threshold voltage v gs(th) i d =1ma, v ds =v gs 0.8 1.4 1.8 v v gs =10v, i d =500ma 5.6 8.5 v gs =4.5v, i d =360ma 5.9 9.0 v gs =2.4v, i d =20ma 6.4 9.5 forward transconductance *3 g fs v ds =10v,i d =0.3a 0.3 0.475 s input capacitance c iss 72 pf output capacitance c oss 11 pf reverse transfer capacitance c rss 3.6 pf turn-on delay time t d(on) 1.25 ns rise time t r 1.70 ns turn-off delay time t d(off) 11.40 ns fall time t f 3.5 ns total gate charge q g 2.6 3.65 nc gate-source charge q gs 0.2 0.28 nc gate drain charge q gd 0.5 0.7 nc diode forward voltage*! v sd t j =25 ,i s =360ma,v gs =0v 0.97 v reverse recovery time *3 t rr t j =25 ,i f =360ma, 186 260 ns reverse recovery charge *3 q rr d i /d t = 100a/ s 34 48 nc *! measured under pulsed conditions. width=300 s. duty cycle 2% . *2 switching characteristics are independent of operating junction temperature. *3 for design aid only, not subject to production testing. static drain-source on-state resistance *1 v ds =25v,v gs =10v,i d =360ma*2 v dd =30v, i d =360ma,r g =50 , vqs=10v *2 v ds =25 v, v gs =0v,f=1mhz r ds(on) KVN4525E6 marking marking n52
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