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d a t a sh eet product speci?cation 2003 feb 20 discrete semiconductors PBSS4240DPN 40 v low v cesat npn/pnp transistor b ook, halfpage m3d302
2003 feb 20 2 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN features low collector-emitter saturation voltage v cesat high collector current capability i c and i cm high collector current gain h fe at high i c high efficiency leading to reduced heat generation reduced printed-circuit board area requirements. applications power management: C complementary mosfet driver C dual supply line switching. peripheral driver: C half and full bridge motor drivers C multi-phase stepper motor driver. description npn/pnp low v cesat transistor pair in a sot457 (sc-74) plastic package. marking type number marking code PBSS4240DPN m3 pinning pin description 1, 4 emitter tr1; tr2 2, 5 base tr1; tr2 6, 3 collector tr1; tr2 handbook, halfpage mam445 13 2 tr1 tr2 6 4 5 top view 123 654 fig.1 simplified outline sot457 (sc-74) and symbol. quick reference data symbol parameter max. unit npn pnp v ceo emitter-collector voltage 40 - 40 v i c collector current (dc) 1.35 - 1.1 a i crp repetitive peak collector current 2 - 2a i cm peak collector current 3 - 3a r cesat equivalent on-resistance 200 260 m w
2003 feb 20 3 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. operated under pulsed conditions: duty cycle d 20%; pulse width tp 10 ms; mounting pad for collector standard footprint. 2. device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm 2 . 3. device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. thermal characteristics notes 1. device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm 2 . 2. operated under pulsed conditions: pulse width t p 10 ms; duty cycle d 0.20; mounting pad for collector standard footprint. symbol parameter conditions min. max. unit per transistor unless otherwise speci?ed; for the pnp transistor with negative polarity v cbo collector-base voltage open emitter - 40 v v ceo collector-emitter voltage open base - 40 v v ebo emitter-base voltage open collector - 5v i c collector current (dc) - npn - 1.35 a pnp -- 1.1 a i crp repetitive peak collector current note 1 - 2a i cm peak collector current single peak - 3a i b base current (dc) - 300 ma i bm peak base current - 1a p tot total power dissipation t amb 25 c; note 2 - 370 mw t amb 25 c; note 3 - 310 mw t amb 25 c; note 1 - 1.1 w t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c per device p tot total power dissipation t amb 25 c; note 2 - 600 mw symbol parameter conditions value unit per transistor r th j-a thermal resistance from junction to ambient in free air; note 1 340 k/w in free air; note 2 110 k/w
2003 feb 20 4 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN characteristics t amb =25 c unless otherwise speci?ed. note 1. pulse test: t p 300 m s; d 0.02. symbol parameter conditions min. typ. max. unit per transistor unless otherwise speci?ed; for the pnp transistor with negative polarity i cbo collector-base cut-off current v cb = 40 v; i e =0 -- 100 na v cb = 40 v; i e = 0; t j = 150 c -- 50 m a i ceo collector-emitter cut-off current v ce = 30 v; i b =0 -- 100 na i ebo emitter-base cut-off current v eb =5v; i c =0 -- 100 na h fe dc current gain v ce =5v; i c =1ma 300 -- f t transition frequency i c = 50 ma; v ce =10v; f = 100 mhz 150 -- mhz c c collector capacitance v cb = 10 v; i e =i e =0; f = 1 mhz -- 12 pf tr1 (npn) h fe dc current gain v ce =5v; i c = 500 ma 300 - 900 v ce =5v; i c =1a 200 -- v ce =5v; i c = 2 a; note 1 75 -- v cesat collector-emitter saturation voltage i c = 100 ma; i b =1ma - 60 75 mv i c = 500 ma; i b =50ma - 80 100 mv i c = 1 a; i b = 100 ma - 150 200 mv i c = 2 a; i b = 200 ma; note 1 - 300 400 mv v besat base-emitter saturation voltage i c = 1 a; i b = 100 ma -- 1.2 v v beon base-emitter turn-on voltage v ce =5v; i c =1a -- 1.1 v r cesat equivalent on-resistance i c = 1 a; i b = 100 ma -- 200 m w tr2 (pnp) h fe dc current gain v ce = - 5 v; i c = - 100 ma 300 - 800 v ce = - 5 v; i c = - 500 ma 250 -- v ce = - 5 v; i c = - 1 a 160 -- v ce = - 5 v; i c = - 2 a; note 1 50 -- v cesat saturation voltage i c = - 100 ma; i b = - 1ma -- 90 - 120 mv i c = - 500 ma; i b = - 50 ma -- 100 - 145 mv i c = - 1 a; i b = - 100 ma -- 180 - 260 mv i c = - 2 a; i b = - 200 ma; note 1 -- 400 - 530 mv v besat saturation voltage i c = - 1 a; i b = - 50 ma --- 1.1 v v beon base-emitter turn-on voltage v ce = - 5 v; i c = - 1a --- 1v r cesat equivalent on-resistance i c = - 1 a; i b = - 100 ma; note 1 -- 260 m w
2003 feb 20 5 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN handbook, halfpage 0 800 200 400 600 mhc471 10 - 1 1 i c (ma) h fe 10 10 2 10 3 10 4 (1) (2) (3) fig.2 dc current gain as a function of collector current; typical values. tr1 (npn); v ce =5v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage mhc472 0 1.2 0 . 4 0 . 8 10 - 1 110 i c (ma) v be (v) 10 2 10 3 10 4 (1) (3) (2) fig.3 base-emitter voltage as a function of collector current; typical values. tr1 (npn); v ce =5v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c. handbook, halfpage 10 - 1 11010 2 10 3 10 4 10 10 2 10 3 mhc473 i c (ma) v cesat (mv) (1) (3) (2) fig.4 collector-emitter saturation voltage as a function of collector current; typical values. tr1 (npn); i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage 0.2 1.2 0.4 0.6 0.8 1 mhc474 10 - 1 110 i c (ma) v besat (v) 10 3 10 2 10 4 (1) (2) (3) fig.5 base-emitter saturation voltage as a function of collector current; typical values. tr1 (npn); i c /i b = 20. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c.
2003 feb 20 6 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN handbook, halfpage 02 2 0 0.4 0.8 1.2 1.6 0.4 v ce (v) i c (a) 0.8 1.2 1.6 mhc475 (7) (10) (8) (6) (5) (4) (9) (1) (2) (3) fig.6 collector current as a function of collector-emitter voltage; typical values. (1) i b = 30 ma. (2) i b = 27 ma. (3) i b = 24 ma. (4) i b = 21 ma. (5) i b = 18 ma. (6) i b = 15 ma. (7) i b = 12 ma. (8) i b = 9 ma. (9) i b = 6 ma. (10) i b = 3 ma. tr1 (npn); t amb =25 c. handbook, halfpage mhc476 10 3 10 2 1 10 - 1 10 10 - 1 1 r cesat ( w ) i c (ma) 10 10 2 10 3 10 4 (3) (1) (2) fig.7 collector-emitter equivalent on-resistance as a function of collector current; typical values. tr1 (npn); i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c.
2003 feb 20 7 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN handbook, halfpage 0 1000 200 400 600 800 mhc464 - 10 - 1 - 1 - 10 i c (ma) h fe - 10 2 - 10 3 - 10 4 (3) (2) (1) fig.8 dc current gain as a function of collector current; typical values. tr2 (pnp); v ce = - 5v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage mhc465 0 - 1.2 - 0 . 4 - 0 . 8 - 10 - 1 - 1 - 10 i c (ma) v be (v) - 10 2 - 10 3 - 10 4 (1) (3) (2) fig.9 base-emitter voltage as a function of collector current; typical values. tr2 (pnp); v ce = - 5v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c. handbook, halfpage mhc466 - 10 - 10 3 - 10 2 - 10 - 1 - 1 - 10 i c (ma) v cesat (mv) - 10 2 - 10 3 - 10 4 - 1 (1) (2) (3) fig.10 collector-emitter saturation voltage as a function of collector current; typical values. tr2 (pnp); i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage - 0.2 - 1.2 - 0.4 - 0.6 - 0.8 - 1 mhc467 - 10 - 1 - 1 - 10 i c (ma) v besat (v) - 10 3 - 10 2 - 10 4 (1) (2) (3) fig.11 base-emitter saturation voltage as a function of collector current; typical values. tr2 (pnp); i c /i b = 20. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c.
2003 feb 20 8 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN handbook, halfpage 0 (1) (2) (3) (4) (6) (8) i c (a) v ce (v) - 1.2 - 0.8 - 0.4 0 - 0.4 - 2 - 0.8 - 1.2 - 1.4 mhc468 (9) (10) (7) (5) fig.12 collector current as a function of collector-emitter voltage; typical values. (1) i b = - 7 ma. (2) i b = - 6.3 ma. (3) i b = - 5.6 ma. (4) i b = - 4.9 ma. (5) i b = - 4.2 ma. (6) i b = - 3.5 ma. (7) i b = - 2.8 ma. (8) i b = - 2.1 ma. (9) i b = - 1.4 ma. (10) i b = - 0.7 ma. tr2 (pnp); t amb =25 c. handbook, halfpage 0 - 2 - 2.4 - 2 0 - 0.4 - 0.8 - 1.2 - 1.6 - 0.4 v ce (v) i c (a) - 0.8 - 1.2 - 1.6 mhc469 (9) (7) (10) (8) (1) (2) (3) (4) (5) (6) fig.13 collector current as a function of collector-emitter voltage; typical values. (1) i b = - 50 ma. (2) i b = - 45 ma. (3) i b = - 40 ma. (4) i b = - 35 ma. (5) i b = - 30 ma. (6) i b = - 25 ma. (7) i b = - 20 ma. (8) i b = - 15 ma. (9) i b = - 10 ma. (10) i b = - 5 ma. tr2 (pnp); t amb =25 c.
2003 feb 20 9 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN handbook, halfpage mhc470 10 3 10 2 1 10 - 1 10 - 10 - 1 - 1 r cesat ( w ) i c (ma) - 10 - 10 2 - 10 3 - 10 4 (2) (3) (1) fig.14 collector-emitter equivalent on-resistance as a function of collector current; typical values. tr2 (pnp); i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c.
2003 feb 20 10 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN package outline references outline version european projection issue date iec jedec eiaj sot457 sc-74 wb m b p d e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot457 unit a 1 b p cd e h e l p qy w v mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.6 0.2 0.33 0.23 a 1.1 0.9 97-02-28 01-05-04
2003 feb 20 11 philips semiconductors product speci?cation 40 v low v cesat npn/pnp transistor PBSS4240DPN data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 613514/01/pp 12 date of release: 2003 feb 20 document order number: 9397 750 10783

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