TQM7M4006 datasheet 3v quad-band gsm850/gsm900/dcs/ pcs power amplifier module features ? very compact size ? 5 5 1.1 mm 3 . ? positive supply voltage ? 3.0 to 4.5 v. ? high efficiency ? typical gsm850 52%, gsm900 57%, dcs 51%, pcs 51%. ? cmos internal closed-loop power control. ? >55 db dynamic control range. ? gprs class 12 compatible. ? high-reliability ingap technology. ? ruggedness 10:1. ? 50 input and output impedances. ? few external components applications ? gsm handsets ? gsm wireless cards and data links package style package size: lga 5 x 5 x 1.1 mm 3 rf_in_dcs bs tx_en vbatt vramp rf_in_gsm rf_out_gsm rf_out_dcs gnd top view vcc2d vcc2g vcc3 functional block diagram logic power control dcs / pcs in vramp vbatt tx_en band select gsm 850 / 900 in dcs / pcs out gsm 850 / 900 out vcc product description the TQM7M4006 is an advanced, quad-band, ultra-compact, 3v power amplifier module designed for mobile handset applications. the module sets new standards in performance and size by employing the latest technologies in hbt power amplifier design, laminate design and cuflip? assembly technology. high- reliability is assured by ingap hbt technology. this fully integrated module, in a minimal form factor, provides a simple 50 interface on all input and output ports. it includes internal power control with wide dynamic range, and on-board reference voltage. no external matching or bias components are required. despite its very compact size, the modul e has exceptional efficiency in all bands. incorporates two highly-integrated ingap power amplifier die, a gaas high q passive matching die with a cmos controller. all die are cuflip? mounted to minimize thermal excursions. each amplifier has three gain stages with interstage matching implemented with a high q passives technology for optimal performance. the cmos controller implements a fully integrated power control circuit within the module, eliminating the need for external detection to assure the output power level. the latter is set directly from the v ramp input from the dac. the module has tx enable and band select inputs and a highly-stable on-board reference voltage. excellent performance is achieved across the 824 ? 849 mhz, 880 ? 915 mhz, 1710 ? 1785 mhz, and 1850 ? 1910 mhz bands. module construction is a low-profile overmolded land-grid array on laminate. electrical specifications parameter 850 band 900 band dcs / pcs band units min typ max min typ max min typ max gsm pout efficiency pin 34.2 44 1.5 35 52 5 8 34.2 50 1.5 35 57 5 8 32.5/32 44/44 1.5 33/32.5 51/51 5 8 dbm % dbm all specifications subject to change without notice for additional information and latest specifications, see our website: www.triquint.com may 25, 2007 (rev. f) 2
TQM7M4006 datasheet 3v quad-band gsm850/gsm900/dcs/ pcs power amplifier module all specifications subject to change without notice for additional information and latest specifications, see our website: www.triquint.com may 25, 2007 (rev. f) 3 absolute maximum ratings symbol parameter absolute maximum value units v bat supply voltage -0.5 to 5.5 vdc i bat dc supply current 2.5 a v ramp power control voltage -0.5 to v bat v duty cycle at max. power 50 % vswr output load 10:1 t c case temperature, operating -20 to +100 c t stg storage temperature -55 to +150 c p in input power 12 dbm esd ruggedness all ports hbm per eia/jesd22-a114 cdm per jesd22-c101 2000 2000 v v note: the part will survive over the full range specified for any individual input, while other parameters are nominal and with no rf input. operating parameters parameter conditions min. typ/nom max. units supply voltage- v bat 3.0 3.5 4.5 v supply current- i bat 1.8 a band select voltage- gsm dcs/pcs v bs - l v bs - h 0 1.2 0.5 3.0 vdc vdc tx enable input low high v tx_en - l v tx_en - h 0 1.2 0.5 3.0 vdc vdc leakage current - i l v tx_en - l, v ramp = 0.23v 1 10 a load impedances- z 0 50 ? case temperature- t c -20 +85 c
TQM7M4006 datasheet 3v quad-band gsm850/gsm900/dcs/ pcs power amplifier module all specifications subject to change without notice for additional information and latest specifications, see our website: www.triquint.com may 25, 2007 (rev. f) 4 gsm850/gsm900 mode characteristics standard conditions : v batt =3.5v, v ramp =1.6v, p in =5 dbm, tx_en = h, bs = l, t c = 25c, duty cycle = 25%. parameter conditions min. typ/nom max. units frequency range- f gsm850 gsm900 824 880 849 915 mhz mhz input power for pout max.- p in 1.5 5.0 8.0 dbm output power- p out gsm850 band gsm900 band 34.2 34.2 35.5 35.2 dbm dbm output power degradation v batt =3.0v, p in =5dbm, t min < t c |