a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c none symbol test conditions minimum typical maximum units bv ceo i c = 5.0 ma 15 v bv cbo i c = 10 a 30 v i cbo v cb = 20 v t a = 150 o c 0.01 1.0 a bv ebo i e = 1.0 a 2.0 v h fe v ce = 1.0 v i c = 5.0 ma 40 150 --- v ce(sat) i c = 20 ma i b = 2.0 ma 0.8 v v be(sat) i c = 20 ma i b = 2.0 ma 1.0 v f t v ce = 10 v i c = 5.0 ma f = 100 mhz 1500 mhz c ob v cb = 0 v f = 1.0 mhz v cb = 10 v f = 1.0 mhz 3.0 1.0 pf c ib v eb = 0.5 v f = 1.0 mhz 3.0 pf nf g pe v ce = 6.0 v i c = 1.5 ma f = 200 mhz 15 3.5 4.5 db p o v cb = 10 v i e = 12 ma f = 500 mhz 30 25 mw % npn silicon high frequency transistor MS175H description: the MS175H is designed for high frequency low noise amplifier and oscillator applications. maximum ratings i c 100 ma (peak) v ce 15 v p diss 300 mw @ t c = 25 o c 200 mw @ t a = 25 o c t j -65 o c to +200 o c t stg -65 o c to +200 o c package style to-72 1 = emitter 2 = base 3 = collector 4 = case
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