STTH20003TV october 1999 - ed: 2c high frequency secondary rectifier ? dual rectifiers suited for switch mode power supply and high frequency dc to dc converters. packaged in isotop tm , this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. description combines highest recovery and reverse voltage performance ultrafast, soft and noise-free recovery isolated package: 2500 v rms (ul approval pending device) low inductance and low capacitance allow simpler layout features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 300 v i f(rms) rms forward current 180 a i f(av) average forward current tc = 85 c d = 0.5 per diode perdevice 100 200 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 1000 a i rsm non repetitive peak reverse current tp = 100 m s square 13 a t stg storage temperature range - 55 to + 150 c tj maximum operating junction temperature 150 c absolute ratings (limiting values, per diode) i f(av) 2 x 100 a v rrm 300 v tj (max) 150 c v f (max) 0.95 v trr (max) 90 ns major products characteristics a1 k1 k2 a2 a1 a2 k1 k2 isotop ? isotop is a registered trademark of stmicroelectronics 1/5
symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current v r = 300 v tj = 25 c 200 m a tj = 125 c 0.2 2 ma v f ** forward voltage drop i f = 100 a tj = 25 c 1.20 v tj = 125 c 0.8 0.95 pulse test : * tp = 5 ms, d <2% ** tp = 380 m s, d <2% to evaluate the maximum conduction losses use the following equation: p = 0.75 x i f(av) + 0.0020 x i f 2 (rms) static electrical characteristics (per diode) symbol tests conditions min. typ. max. unit trr i f = 0.5 a irr = 0.25 a i r =1a tj=25 c 55 ns i f =1a di f /dt = - 50 a/ m sv r =30v 90 tfr i f = 100 a di f /dt = 200 a/ m stj=25 c 1400 ns v fp v fr = 1.1 x v f max. 5v s factor vcc = 200 v i f = 100 a tj = 125 c 0.3 - i rm di f /dt = 200 a/ m s 18 a recovery characteristics symbol parameter value unit r th (j-c) junction to case per diode total 0.55 0.35 c/w r th (c) coupling 0.1 when the diodes 1 and 2 are used simultaneously: d t j (diode 1) = p (diode 1) x r th(j-c) (per diode) + p (diode 2) x r th(c) thermal resistances STTH20003TV 2/5
0 20 40 60 80 100 120 0 20 40 60 80 100 120 p1(w) d =1 d = 0.2 d = 0.1 d = 0.5 t d =tp/t tp d = 0.05 if(av) (a) fig. 1: conduction losses versus average current (per diode). 1e-3 1e-2 1e-1 1e+0 5e+0 0.0 0.2 0.4 0.6 0.8 1.0 zth(j-c)/rth(j-c) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse tp(s) fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 500 ifm(a) tj=125 c (typical values) tj=25 c tj=125 c vfm(v) fig. 2: forward voltage drop versus forward current (maximum values, per diode). 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40 irm(a) vr=200v tj=125 c if=2xif(av) if=if(av) if=0.5xif(av) dif/dt(a/ m s) fig. 4: peak reverse recovery current versus dif/dt (90% confidence,per diode). 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180 200 220 240 260 trr(ns) vr=200v tj=125 c if=2xif(av) if=if(av) if=0.5xif(av) dif/dt(a/ m s) fig. 5: reverse recovery time versus dif/dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 s factor vr=200v tj=125 c dif/dt(a/ m s) fig. 6: softness factor (tb/ta) versus dif/dt (typical values, per diode). STTH20003TV 3/5
25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 irm s factor tj( c) fig. 7: relative variation of dynamic parameters versus junction temperature (reference: tj=125 c). 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 600 700 800 900 1000 tfr(ns) vfr=1.1 xvf max. if=if(av) tj=125 c dif/dt(a/ m s) fig.9: forward recovery time versus dif/dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0 1 2 3 4 5 6 7 8 vfp(v) if=if(av) tj=125 c dif/dt(a/ m s) fig. 8: transient peak forward voltage versus dif/dt (90% confidence,per diode). STTH20003TV 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com package mechanical data isotop ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 ordering code marking package weight base qty delivery mode STTH20003TV STTH20003TV isotop 27g. without screws 10 with screws tube epoxy meets ul 94,v0 cooling method: by conduction (c) recommended torque value : 1.3 n.m. maximum torque value: 1.5 n.m. STTH20003TV 5/5
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