1/4 photosensors T35L ? electronic components T35L silicon planar phototransistor general description the planar structure of the T35L silicon phototransistor provides a high degree of sensitivity. high reliability is ensured by a hermetically sealed to-18 package. features ? silicon planar technology applied in design allows detection of microscopic amounts of light ? high sensitivity ? to-18 package for ease of handiling applications ? for photoelectric transducer, switching, logic circuits and control package dimensions (unit: mm) e2p0029-37-x2 f 5.50.3 f 4.60.1 2.54 1.0 45 1 2 f 0.45 1: emitter 2: collector 1 2 ? pin connection diagram 5.8 max. 13.51 3.6 1.0 this version: jan. 1998 previous version: may. 1997
2/4 photosensors T35L electrical and optical characteristics collector-emitter voltage storage temperature operating temperature collector current emitter-collector voltage parameter symbol rating unit v ceo v eco i c t opr t stg 20 5 20 C40 to +100 C55 to +125 v v ma c c power dissipation p c 150 mw test condition ta=25c absolute maximum ratings typical characteristics ? directional characteristics ? photocurrent vs. ambient temperature (v ce =9 v) 400 300 200 100 0 C40 C30 C20 C10 0 10 20 30 40 50 60 70 80 90 100 C50 v ce =9 v percentage of photocurrent at 25c (%) ambient temperature ta (c) directional angle (deg) relative sensitivity (%) 100 60 C30 C20 C10 0 10 20 30 collector-emitter breakdown voltage photocurrent dark current collector-emitter saturation voltage parameter symbol test condition unit bv ceo v ce(sat) i d i l i c =100 m a i c =5 ma standard illuminant a=1000 r x v ce =9 v v ce =9 v standard illuminant a=100 r x v v na m a (ambient temperature ta=25c) min. 20 typ. max. 1000 0.2 0.4 100
3/4 photosensors T35L ? dark current vs. ambient temperature ? spectral sensitivity (ta=25 c) wavelength l ( nm ) relative sensitivity 1 0.5 0.2 0.1 400 500 600 700 800 900 1000 10 3 10 4 10 2 10 1 10 C1 10 C2 C40 C20 0 20 40 60 80 100 v ce =9 v dark current i d (na) ambient temperature ta (c) ? photocurrent vs. illuminance (ta=25 c) ? rise time, fall time vs. load resistance (ta=25 c) photocurrent i l (ma) illuminance ( r x ) v ce =9 v 8 6 4 2 0 0 200 400 600 800 1000 rise time, fall time t r , t f ( m s) t r t f 90% 10% load resistance r l ( w ) t f t r v ce =9 v 10 2 10 3 10 4 100 50 10 5 2 1
4/4 photosensors T35L ? photocurrent vs. voltage (ta=25 c) ? dark current vs. voltage (ta=25 c) 300 r x 500 r x 100 r x photocurrent i l (ma) voltage v ce (v) 0 5 10 15 20 8 6 4 2 0 dark current i d (na) voltage v ce (v) 10 8 6 4 2 0 0 5 10 15 20
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