savantic semiconductor product specification silicon npn power transistors 2SC3893 d escription with to-3p(h)is package built-in damper diode high voltage ,high speed applications horizontal deflection output for high resolution display pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1400 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a i b base current 4 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3893 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =200ma , i c =0 5 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.5a 5.0 v v besat base-emitter saturation voltage i c =6a ;i b =1.5a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 66 200 ma h fe dc current gain i c =1a ; v ce =5v 8 12 f t transition frequency i c =0.1a ; v ce =10v 1 3 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 210 pf v f diode forward voltage i f =6a 2.0 v t s storage time 2.5 s t f fall time resistive load i cp =6a ;i b1 =1.2a;i b2 =-2.4a r l =33.3 @ 0.2 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3893 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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