high-power industrial transistors npn silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. ? collector emitter sustaining voltage e v ceo(sus) = 140 vdc (min) ? excellent second breakdown capability ?????????????????????????????????? ?????????????????????????????????? *maximum ratings ??????????????????? ??????????????????? rating ?????? ?????? symbol ??????? ??????? value ????? ????? unit ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter voltage ?????? ? ???? ? ?????? v ceo ??????? ? ????? ? ??????? 140 ????? ? ??? ? ????? vdc ??????????????????? ??????????????????? collectorbase voltage ?????? ?????? v cb ??????? ??????? 160 ????? ????? vdc ??????????????????? ??????????????????? emitterbase voltage ?????? ?????? v eb ??????? ??????? 7.0 ????? ????? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector current e continuous collector current e peak ?????? ? ???? ? ?????? i c ??????? ? ????? ? ??????? 10 15** ????? ? ??? ? ????? adc ??????????????????? ??????????????????? base current e continuous peak ?????? ?????? i b ??????? ??????? 7.0 e ????? ????? adc ??????????????????? ? ????????????????? ? ??????????????????? total power dissipation @ t c = 25 c derate above 25 c ?????? ? ???? ? ?????? p d ??????? ? ????? ? ??????? 117 0.67 ????? ? ??? ? ????? watts w/ c ??????????????????? ? ????????????????? ? ??????????????????? operating and storage junction temperature range ?????? ? ???? ? ?????? t j , t stg ??????? ? ????? ? ??????? 65 to +200 ????? ? ??? ? ????? c ?????????????????????????????????? ?????????????????????????????????? thermal characteristics ??????????????????? ??????????????????? characteristic ?????? ?????? symbol ??????? ??????? max ????? ????? unit ??????????????????? ? ????????????????? ? ??????????????????? thermal resistance, junction to case ?????? ? ???? ? ?????? r q jc ??????? ? ????? ? ??????? 1.5 ????? ? ??? ? ????? c/w * indicates jedec registered data. ** this data guaranteed in addition to jedec registered data. ? semiconductor components industries, llc, 2001 january, 2001 rev. 9 1 publication order number: 2N3442/d 2N3442 10 ampere power transistor npn silicon 140 volts 117 watts case 107 to204aa (to3)
2N3442 http://onsemi.com 2 ?????????????????????????????????? ?????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ???? ???? min ???? ???? max ??? ??? unit ?????????????????????????????????? ?????????????????????????????????? off characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? collectoremitter sustaining voltage (i c = 200 madc, i b = 0) ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 140 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 140 vdc, i b = 0) ???? ? ?? ? ???? i ceo ???? ? ?? ? ???? e ???? ? ?? ? ???? 200 ??? ? ? ? ??? madc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 140 vdc, v be(off) = 1.5 vdc) (v ce = 140 vdc, v be(off) = 1.5 vdc, t c = 150 c) ???? ? ?? ? ???? i cex ???? ? ?? ? ???? e e ???? ? ?? ? ???? 5.0 30 ??? ? ? ? ??? madc ??????????????????????? ? ????????????????????? ? ??????????????????????? emitter cutoff current (v be = 7.0 vdc, i c = 0) ???? ? ?? ? ???? i ebo ???? ? ?? ? ???? e ???? ? ?? ? ???? 5.0 ??? ? ? ? ??? madc ?????????????????????????????????? ?????????????????????????????????? on characteristics (1) ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) (i c = 10 adc, v ce = 4.0 vdc) ???? ? ?? ? ? ?? ? ???? h fe ???? ? ?? ? ? ?? ? ???? 20 7.5 ???? ? ?? ? ? ?? ? ???? 70 e ??? ? ? ? ? ? ? ??? e ??????????????????????? ??????????????????????? collectoremitter saturation voltage (i c = 10 adc, i b = 2.0 adc) ???? ???? v ce(sat) ???? ???? e ???? ???? 5.0 ??? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? baseemitter on voltage (i c = 10 adc, v ce = 4.0 vdc) ???? ? ?? ? ???? v be(on) ???? ? ?? ? ???? e ???? ? ?? ? ???? 5.7 ??? ? ? ? ??? vdc ?????????????????????????????????? ?????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? currentgain e bandwidth product (2) (i c = 2.0 adc, v ce = 4.0 vdc, f test = 40 khz) ???? ? ?? ? ???? f t ???? ? ?? ? ???? 80 ???? ? ?? ? ???? e ??? ? ? ? ??? khz ??????????????????????? ? ????????????????????? ? ??????????????????????? smallsignal current gain (i c = 2.0 adc, v ce = 4.0 vdc, f = 1.0 khz) ???? ? ?? ? ???? h fe ???? ? ?? ? ???? 12 ???? ? ?? ? ???? 72 ??? ? ? ? ??? e *indicates jedec registered data. notes: 1. pulse test: pulse width = 300 m s, duty cycle 2.0%. 2. f t = |h fe | ? f test 1.0 0 0 25 50 75 100 125 150 175 200 figure 1. power derating t c , case temperature ( c) /p d(max) , power dissipation (normalized) 0.8 0.6 0.4 0.2 p d
2N3442 http://onsemi.com 3 active region safe operating area information there are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 200 c; t c is vari- able depending on conditions. at high case temperatures, thermal limitations will reduce the power that can be han- dled to values less than the limitations imposed by second breakdown. 20 2.0 v ce , collector-emitter voltage (volts) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.2 5.0 20 100 200 i c , collector current (amp) current limit thermal limit @ t c = 25 c single pulse second breakdown limit dc 1.0 ms 10 m s 0.5 0.3 3.0 7.0 10 30 50 70 30 m s 50 m s 100 m s t j = 200 c 100 ms figure 2. 2N3442 v ce , collector-emitter voltage (volts) 400 0.1 figure 3. dc current gain i c , collector current (amp) 4.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 40 20 100 60 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 4.0 v 6.0 10 200 7.0 figure 4. collectorsaturation region 1.4 2.0 i b , base current (ma) 0 5.0 10 20 50 100 200 500 1.0k 2.0k 1.0 0.8 0.6 0.4 i c = 1.0 a t j = 25 c 4.0 a 8.0 a 1.2 0.2 2.0 a
2N3442 http://onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h case 107 to204aa (to3) issue z on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 2N3442/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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