2007. 4. 2 1/2 semiconductor technical data KTK999S revision no : 0 for fm audio tuner features high forword transter admittance low noise gain controlled amplifier maximum ratings (ta=25 ) dim millimeters 1. drain 2. gate 3. source sot-23 a b c d e 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2.93 0.20 + _ type name marking lot no. m 2 n channel mosfet electrical characteristics (ta=25 ) characteristic symbol rating unit drain source voltage v ds 20 v drain current i d 30 ma drain power dissipation (t s 76 ) p d 200 mw channel temperature t ch 150 storage temperature range t stg -55~150 characteristic symbol test conditions min typ max unit drain source breakdown voltage v (br)dsx i d =10 a, v gs = -4v 20 - - v gate-source breakdown voltage v (br)gss i gs = 10ma, v ds = 0 6.5 - 12 v gate leakage currnet i gss v gs = 5a, v ds = 0 - - 50 a drain current i dss v ds =10v, v gs = 0 5 10 16 ma gate source pinch voltage v gs(off) v ds =10v, i d =20 a - -0.8 -1.5 v forward transfer admittance y fs v ds =10v, i d =10ma 14 20 - ms input capacitance c iss v ds =10v, i d =10ma, f= 10mhz - 2.5 - pf output capacitance c oss - 0.9 - power gain g p v ds =10v, i d =10ma, f= 45mhz - 27 - db noise figure nf - 2.1 -
2007. 4. 2 2/2 KTK999S revision no : 0 drain-source voltage v ds (v) drain current i d (ma) 0 i d - v ds -0.5 0 -1 5 15 25 30 gate-source voltage v gs (v) 20 0 -1 0 y fs - v gs forward transfer admittance y fs (ms) 0 0.5 1.0 1.5 10 20 0 1 3 2 15 10 5 10 2 8 12 4 18 6 14 16 01 10 5 15 25 20 30 i d - v gs input capacitance ciss (pf) output capacitance coss (pf) -1 ciss - v gs 01 -2 drain-source voltage v ds ( v ) coss - v ds gate-source voltage v gs (v) gate-source voltage v gs (v) 0 1 3 2 -1 0 1 -2 0.3v 0.2v 0.1v 0v -0.1v -0.2v -0.3v -0.4v drain current i d (ma)
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