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| fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. !" ? s d g t o -22 0 ab !" #$% & ' () * ! + , (, - ' () *! + , (, # ' . + &/ . () * ! . 0 + 1 " 2 + 3 "! , , 3 4 , 5 3.#6 75 38 - $ ' #6 7 # 5 1 6#6 75 38 $ 6 .+ 6 8 6 , ) 91 3 :- ) 3)$1 3 ! 3)$1 ;&$$ $ < = 3 >& = 0 % ? ;@?$< www.irf.com 1 #$ 2 www.irf.com , + a 0 , 3 , , *,' * b# ? ? a 0 , 3)$1 ,! !' *$# + 9 - ? , *,' *# , )7 7 , 3 , , *, ' * b# 3 0 ) , * ,' *# , * ,, *, , *,, *,) * ! 0 23 , *, 6 23 , *, c ) 7 3 ' *# c 7 3 , *, c + ;d= d<7 3 -& , *, 3& ) 9 +8) $ e , */, ) $ ' *# ) 9 +8) $ e * ? ) $ - *& ?, 3 a 0 &$$; < $1 3 ' 1 1 - , *, 9 1 1 1 , * , 6 ) 1 & f*=gh 3 g b# # ' + 23 ' 2 ' ' s d g - !"# 2 ' + ' 1 6 3i10 7 $ %8 $jk $1 ; 3< i sd # /#b, , ) - ! .0 7 bi 8 8 l , * , 3) * !2*$g * ? ' *#; 3 < ' =9 5)8$% ;a 8+ < 7 0 3 7 . 3 6 ;a 8+ < 1 k , + 0 , 3 , ) * !' *#, *, 6 6 8) $ & / ) * !' *# c 6 6 87 3 / *#b $ % " # &/ - s d g www.irf.com 3 ! 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 25c c a 4.5v 1 10 100 0.1 1 10 100 4.5v i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 175c c a 1 10 100 45678910 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) t = 175c j a v = 25v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 17a d 4 www.irf.com " ## $% & # " & '( " &) * & * " & 0 100 200 300 400 500 600 700 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 048121620 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v i = 10a ds ds d 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c single pulse c j www.irf.com 5 '( # "% & v ds 90% 10% v gs t d(on) t r t d(off) t f , 1 ! 0.1 % "% &+, , +m) , '( - , ./ + - , 0 4 8 12 16 20 25 50 75 100 125 150 175 c i , drain current (amps) d t , case temperature (c) a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 6 www.irf.com 0. , v ds l d.u.t. v dd i as t p 0.01 ? r g + - t p v ds i as v dd v (br)dss "#$ 0. ,+, d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - * & q g q gs q gd v g charge 1 2* &+, '( ), -& # 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top 4.2a 7.2a bottom 10a v = 25v d dd www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - for n-channel hexfet ? power mosfets 3 , * , 2 3 26+6 , ? 6 %8 ? + 6 $ 81+m) ? ' %8+ 8 d+d ? +m)+6 m ) 28 ? 2 0 8' ? . ? 2 023' ) $ 3 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo re ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/04 |
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