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CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.0A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C 12 6.0 24 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W 2003.July 5 - 233 http://www.cetsemi.com CEM9935A Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current On Characteristics c TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSS VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.7A VDS = 10V, ID = 5.4A, VGS = 4.5V VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6 Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 6.0A VGS = 4.5V, ID = 4.3A VGS = 2.5V, ID = 3.5A VDS = 10V, ID = 4.3A 0.5 30 35 58 7 511 216 73 20 12 50 10 11 3.6 2.8 1.7 1.3 50 30 100 25 15 Min 20 1 Typ Max Units V A 100 1.5 36 42 75 nA V m m m S pF pF pF ns ns ns ns nC nC nC A V Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c d VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 234 CEM9935A 20 VGS=4.5,3.5,2.5V 15 ID, Drain Current (A) VGS=2.0V 12 ID, Drain Current (A) 16 12 9 5 25 C TJ=125 C -55 C 1.5 2.0 2.5 3.0 8 6 4 3 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 600 450 300 Coss 150 0 0 5 10 15 20 25 Crss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=4.3A VGS=4.5V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250A IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 5 - 235 CEM9935A VGS, Gate to Source Voltage (V) 5 V =10V DS ID=4.3A 10 2 RDS(ON)Limit ID, Drain Current (A) 4 10 1 3 10 0 1ms 10ms 100ms 1s 10s DC 2 1 10 -1 0 0 3 6 9 12 10 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 5 - 236 |
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