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| Pb Free Plating Product ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B GTS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A Description The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0 Max. 6.60 4.50 0.75 8 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current ,VGS@4.5V Drain Current ,VGS@4.5V Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range 1, 3 3 Symbol VDS VGS ID @Ta=25 : ID @Ta=70 : IDM PD @Ta=25 : Tj, Tstg Ratings 20 12 6 4.8 20 1 -55 ~ +150 0.008 Unit V V A A A W : W/ : Linear Derating Factor Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 125 Unit : /W GTS9926 Page: 1/4 ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 20 0.5 - Typ. 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 1.2 100 1 25 28 38 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= 12V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6.0A VGS=2.5V, ID=5.2A ID=6A VDS=20V VGS=5.0V VDS=10V ID=1A VGS=5V RG=6 RD=10 VGS=0V VDS=20V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) Symbol VSD IS Min. - Typ. - Max. 1.2 1.54 Unit V A Test Conditions IS=1.7A, VGS=0, Tj=25 : VD= VG=0V, VS=1.3V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 208 : /W when mounted on Min. copper pad. GTS9926 Page: 2/4 ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GTS9926 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTS9926 Page: 4/4 |
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