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 NPN 2N3583 - 2N3584 - 2N3585
NPN SILICON POWER TRANSISTORS.
High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO VCEO
VEBO
Ratings
Collector-Base Voltage (IE= 0) 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 tp = 10ms @ Tmb = 70C
Value
250 330 440 175 250 300 6 1 2 2 5 1 35 200 -65 to +200
Unit
V
Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Peak Collector Current Base current Total power Dissipation Junction Temperature Storage Temperature
V V A A A Watts C C
IC ICM IB PT TJ TStg
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Thermal Resistance, Junction to Case Thermal Resistance, Junction to ambient in free air
Value
5 87.5
Unit
C/W
COMSET SEMICONDUCTORS
1
NPN 2N3583 - 2N3584 - 2N3585
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
Ratings
Collector-Emitter cut-off current
Test Condition(s) 2N3583
IB = 0 ; VCE = 150 V VBE = -1.5V ; VCE = 225 V VBE = -1.5V ; VCE = 340 V VBE = -1.5V ; VCE = 450 V VBE = -1.5V ; VCE = 225 V Tj= 150C VBE = -1.5V ; VCE = 300 V Tj= 150C IC = 0 ; VEB = 6 V
Min Typ Mx Unit
-
ICEO
2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3583 2N3584 2N3585 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585
10 5 5
1 mA
ICEX
Collector-Emitter cut-off current
175 250 300 40 10 25 25 8 8 350
-
3 5 0.5 0.5 5 0.75 0.75 1.4 200 100 100 80 80 mA
IEBO VCEO(SUS) VCE(SAT) VBE(SAT)
Emitter cut-offcurrent Collector-Emitter sustaning Voltage (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1)
IB = 0 ; IC = 200 mA
V
IC = 1 A ; IB = 125 mA
V
IC = 1 A ; IB = 100 mA VCE = 10 V ; IC = 500 mA
hFE
DC Current Gain (1)
VCE = 10 V ; IC = 1 A VCE = 2 V ; IC = 1 A
IS/B fT td+tr tf ts
Second Breakdown Collector current Transition frequency Turn-on-time Fall time Carrier storage time
VCE = 100 V ; t = 1 s VCE = 10 V ; IC = 200 mA f = 5 MHz IC = 1 A ; IB = 100 mA IC = 1 A ; IB = 100 mA IC = 1 A ; IB = 100 mA
10 -
-
3 3 4
MHz
s
1. Measured under pulse conditions :tP <300s, <2%.
COMSET SEMICONDUCTORS
2
NPN 2N3583 - 2N3584 - 2N3585
MECHANICAL DATA CASE TO-66
Pin 1 : Pin 2 : Case : Base Emitter Collector
COMSET SEMICONDUCTORS
3


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Price & Availability of 2N3583
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