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| www..com www.fairchildsemi.com KA1M0280RB/KA1H0280RB Fairchild Power Switch(FPS) Features * * * * * * * * * Precision Fixed Operating Frequency KA1M0280RB (67kHz) , KA1H0280RB (100kHz) Pulse by Pulse Over Current Limiting Over Load Protection Over Voltage Protection (Min. 23V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto Restart Description The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. TO-220F-4L 1 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5V Vref Good logic OSC 9V 5A #4 FB 1mA - 2.5R 1R + 7.5V - + 25V - Thermal S/D OVER VOLTAGE S/D + S R L.E.B 0.1V S R Q #1 GND Q Internal bias #2 DRAIN SFET Power on reset Rev.1.0.2 (c)2003 Fairchild Semiconductor Corporation www..com KA1M0280RB/KA1H0280RB Absolute Maximum Ratings Parameter Maximum Drain Voltage (1) Symbol VD,MAX VDGR VGS IDM EAS IAS ID ID VCC,MAX VFB PD Darting TA TSTG Value 800 800 30 8.0 90 8 2.0 1.3 30 -0.3 to VSD 35 0.28 -25 to +85 -55 to +150 Unit V V V ADC mJ A ADC ADC V V W W/C C C Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (2) Single Pulsed Avalanche Energy (3) Avalanche Current (4) Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Ambient Temperature Storage Temperature Notes: 1. Tj = 25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 51mH, VDD = 50V, RG = 25, starting Tj = 25C 4. L = 13H, starting Tj = 25C 2 www..com KA1M0280RB/KA1H0280RB Electrical Characteristics (SFET part) (Ta=25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=1.0A VDS=50V, ID=1.0A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=2.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=2.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) Min. 800 1.5 Typ. 5.6 2.5 250 52 25 21 28 77 24 15 20 Max. 50 200 7.0 60 nC nS pF Unit V A A S Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test: Pulse width 300S, duty cycle 2% 1 2. S = --R (Note) IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 3 www..com KA1M0280RB/KA1H0280RB Electrical Characteristics (CONTROL part) (Continued) (Ta=25C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Frequency Change With Temperature (2) Maximum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current REFERENCE SECTION Output Voltage (1) Temperature Stability Peak Current Limit PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) Over Voltage Protection Voltage TOTAL DEVICE SECTION Start-Up Current Operating Supply Current (Control Part Only) VCC Zener Voltage ISTART IOP VZ VCC=14V Ta=25C ICC=20mA 0.1 6 30 0.3 12 32.5 0.45 18 35 mA mA V TSD VOVP 140 23 160 25 28 C V (1)(2) Symbol VSTART VSTOP Condition After turn on KA1M0280RB KA1H0280RB -25C Ta +85C KA1M0280RB KA1H0280RB Ta=25C, 0V Vfb 3V Ta=25C, 5V Vfb VSD Ta=25C -25C Ta +85C Max. inductor current Min. 14 9 61 90 74 64 0.7 6.9 4.0 4.80 1.05 Typ. 15 10 67 100 5 77 67 0.9 7.5 5.0 5.00 0.3 1.2 Max. 16 11 73 110 10 80 70 1.1 8.1 6.0 5.20 0.6 1.35 Unit V V FOSC F/T Dmax kHz % % IFB VSD Idelay Vref Vref/T IOVER mA V A V mV/C A CURRENT LIMIT (SELF-PROTECTION) SECTION Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 www..com KA1M0280RB/KA1H0280RB Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25C) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 Fig.2 Feedback Source Current 0 25 50 75 100 125 150 Temperature [C] Figure 1. Operating Frequency Temperature [C] Figure 2. Feedback Source Current Fig.3 Operating Current 1.2 1.15 1.1 1.05 IIop 1 OP 0.95 0.9 0.85 0.8 -25 1.1 1.05 Fig.4 Max Inductor Current IIpeak 1 over 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Temperature [C] Figure 3. Operating Supply Current Temperature [C] Figure 4. Peak Current Limit 1.5 1.3 Fig.5 Start up Current 1.15 1.1 1.05 Fig.6 Start Threshold Voltage IST Istart 1.1 0.9 0.7 0.5 -25 Vth(H) 1 Vstart 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Figure 5. Start up Current Temperature [C] Figure 6. Start Threshold Voltage 5 www..com KA1M0280RB/KA1H0280RB Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25C) Fig.7 Stop Threshold Voltage 1.15 1.1 1.05 1.15 1.1 1.05 Fig.8 Maximum Duty Cycle Vth(L) Vstop 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Dmax 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Figure 7. Stop Threshold Voltage Temperature [C] Figure 8. Maximum Duty Cycle Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.10 Shutdown Feedback Voltage Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Figure 9. VCC Zener Voltage Temperature [C] Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.12 Over Voltage Protection Vovp 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Figure 11. Shutdown Delay Current Temperature [C] Figure 12. Over Voltage Protection 6 www..com KA1M0280RB/KA1H0280RB Typical Performance Characteristics (Continued) (These characteristic groups are normalized at Ta=25C) Fig.14 Drain Source Turn-on Resistance 2.5 2 1.5 ( Rdson)1 0.5 0 -25 0 25 50 75 100 125 150 Temperature [C] Figure 13. Static Drain-Source on Resistance 7 www..com KA1M0280RB/KA1H0280RB Package Dimensions TO-220F-4L 8 www..com KA1M0280RB/KA1H0280RB Package Dimensions (Continued) TO-220F-4L(Forming) 9 www..com KA1M0280RB/KA1H0280RB Ordering Information Product Number KA1M0280RB-TU KA1M0280RB-YDTU KA1H0280RB-TU KA1H0280RB-YDTU TU : Non Forming Type YDTU : Forming Type Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Rating 800V, 2A 800V, 2A Fosc 67kHz 100kHz DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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