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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package www..com *High voltage,high speed *Wide area of safe operation APPLICATIONS *Electronic ballasts for fluorescent lighting *Switch mode power supplies *Flyback and forward single transistor low power converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUL310 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Base current-Peak Total power dissipation Maximum operating junction temperature Storage temperature tp<5ms TC=25 tp<5ms CONDITIONS Open emitter Open base Open collector VALUE 1000 500 9 5 10 3 4 75 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 1.65 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0; L=25mH IE=10mA ;IC=0 IC=1A; IB=0.2A IC=2A ;IB=0.4A IC=3A ;IB=0.6A IC=1A; IB=0.2A IC=2A ;IB=0.4A IC=3A ;IB=0.6A VCE=1000V; VBE=0 TC=125 VCE=400V; IB=0 IC=10mA ; VCE=5V IC=3A ; VCE=2.5V 10 10 MIN 500 9 TYP. www..com BUL310 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBEsat-3 ICES ICEO hFE-1 hFE-2 MAX UNIT V V 0.5 0.7 1.1 1.0 1.1 1.2 100 500 250 V V V V V V A A Switching times inductive load ts tf Storage time Fall time IC=2A ;VCL=250V IB1 =0.4A;VBE(off)=-5V L=200H; RBB=0B 1.9 0.16 s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BUL310 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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