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| NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LS TO-263 D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50m ID 12A 1. GATE 2. DRAIN 3. SOURCE G S www..com ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS 20 12 8 45 60 3 48 20 -55 to 150 275 UNITS V TC = 25 C TC = 100 C L = 0.1mH L = 0.05mH TC = 25 C TC = 100 C ID IDM EAS EAR PD Tj, Tstg TL A mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 C SYMBOL RJC RJA RCS TYPICAL MAXIMUM 3 75 UNITS C / W 1 Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 C 25 0.8 1.2 2.5 V LIMITS UNIT MIN TYP MAX 250 nA 25 250 A 1 MAY-6-2003 NIKO-SEM On-State Drain Current1 Drain-Source On-State Resistance1 N-Channel Logic Level Enhancement Mode Field Effect Transistor ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 5V, ID = 12A VGS = 10V, ID = 12A VDS = 15V, ID = 12A DYNAMIC 12 P3057LS TO-263 A 70 48 16 115 85 m S Forward Transconductance1 Input Capacitance www..com Ciss Coss Crss Qg 2 450 VGS = 0V, VDS = 15V, f = 1MHz 200 60 15 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A 2.0 7.0 6.0 VDS = 15V, RL = 1 ID 12A, VGS = 10V, RGS = 2.5 6.0 20 5.0 nS nC pF Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time 2 2 Qgs Qgd td(on) tr td(off) tf Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 3 IS ISM VSD trr IRM(REC) Qrr IF = IS, dlF/dt = 100A / S IF = IS, VGS = 0V 30 15 0.043 12 20 1.5 A V nS A C Forward Voltage1 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P3057LS", DATE CODE or LOT # 2 MAY-6-2003 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LS TO-263 www..com 3 MAY-6-2003 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LS TO-263 TO-263 (D2PAK) MECHANICAL DATA mm Min. 14.5 4.2 1.20 2.8 0.3 -0.102 8.5 9 0.4 0.5 0.203 9.5 Typ. 15 Max. 15.8 4.7 1.35 mm Min. 1.0 9.8 6.5 1.5 0.7 4.83 5.08 1.4 5.33 Typ. 1.5 Max. 1.8 10.3 Dimension www..com Dimension H I J K L M N A B C D E F G 4 MAY-6-2003 |
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