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| www..com European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 11,85 55,2 M8 screwing depth max. 8 31,5 130 114 E1 C2 C1 E1 G1 C1 C2 E2 E2 G2 M4 28 7 2,5 deep 40 53 E1 16 18 44 57 C2 screwing depth max. 8 2,5 deep E1 C2 G1 G2 C1 E2 C1 E2 VWK Apr. 1997 IGBT-Module Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prufspannung Kollektor-Emitter Sattigungsspannung Gate-Schwellenspannung Eingangskapazitat Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) tp=1 ms VCES IC ICRM Ptot VGE FF 600 R 16 KF4 1600 V 600 A 1200 A 3900 W 20 V 600 A 1200 A 3,4 kV min. iC=600A, vGE=15V, t vj=125C iC=40mA, vCE=vGE, tvj=25C fO=1MHz,tvj=25C,vCE=25V, v GE=0V vCE=1600V, v GE=0V, t vj=25C vCE=1600V, v GE=0V, t vj=125C vCE=0V, v GE=20V, t vj=25C vCE=0V, v EG=20V, t vj=25C iC=600A,vCE=900V,v L=15V iC=600A, vGE=15V, t vj=25C vCE sat vGE(TO) 4,5 tf typ. 3,5 4,6 5,5 90 4 40 0,8 1 1,1 1,3 0,25 0,3 max. 3,9 V 5V 6,5 V - nF - mA - mA 400 nA 400 nA - s - s - s - s - s - s tC=25C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. IF IFRM VISOL Charakteristische Werte / Characteristic values: Transistor Cies iCES Speicherzeit (induktive Last) storage time (inductive load) Fallzeit (induktive Last) fall time (inductive load) vL=15V, R G=3,3, tvj=25C vL=15V, R G=3,3, tvj=125C vL=15V, R G=3,3, tvj=125C iC=600A,vCE=900V,v L=15V iC=600A,vCE=900V,v L=15V vL=15V, R G=3,3, tvj=25C vL=15V, R G=3,3, tvj=25C vL=15V, R G=3,3, tvj=125C iEGS ton iGES ts Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverlustenergie pro Puls Abschaltverlustenergie pro Puls Inversdiode / Inverse diode Durchlaspannung Ruckstromspitze forward voltage peak reverse recovery current turn-on energy loss per pulse turn-off energy loss per pulse iC=600A,vCE=900V,v L=15V Eon Eoff RG=3,3, tvj=125C, LS=70nH iF=600A, vGE=0V, t vj=25C iF=600A, vGE=0V, t vj=125C RG=3,3, tvj=125C, LS=70nH iC=600A,vCE=900V,v L=15V - 240 140 2,4 2,2 230 320 50 110 - mWs - mWs 2,8 V -V -A -A - As - As 0,016 C/W 0,032 C/W 0,04 C/W 0,08 C/W vF IRM Sperrverzogerungsladung recovered charge vRM=900V, v EG=10V, t vj=25C vRM=900V, v EG=10V, t vj=125C vRM=900V, v EG=10V, t vj=125C iF=600A, -diF/dt=3kA/s iF=600A, -diF/dt=3kA/s vRM=900V, v EG=10V, t vj=25C Qr - Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Transistor, DC, pro Modul / per module Transistor, DC, pro Zweig / per arm Diode /diode, DC, pro Modul / per module Diode /diode, DC, pro Zweig / per arm Ubergangs-Warmewiderstand Hochstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur Innere Isolation thermal resistance, case to heatsink max. junction temperature operating temperature storage temperature internal insulation terminals M6 / tolerance 10% terminals M4 / tolerance +5/-10% terminals M8 Gewicht weight G Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. Bedingung fur den Kurzschluschutz / Conditions for short-circuit protection tfg = 10 s VCC = 1000 V vL = 15V RGF = R GR = 3,3 tvj = 125C vCEM = 1300 V iCMK1 6000 A iCMK2 4500 A CEM RthJC pro Module / per Module pro Zweig / per arm RthCK tvj max tc op tstg 0,008 C/W 0,016 C/W 150 C -40...+125 C -40...+125 C Al2O3 Mechanische Eigenschaften / Mechanical properties Anzugsdrehmoment f. mech. Befestigung / mounting torque Anzugsdrehmoment f. elektr. Anschlusse / terminal connection torque M1 M2 3 Nm 2 Nm 8...10 Nm ca. 1500 g Unabhangig davon gilt bei abweichenden Bedingungen / with regard to other conditions v = VCES - 20nH x |di c/dt| FF 600 R 16 KF4 1200 iC [A] 1000 1000 iC [A] 800 VGE = 20 V 15 V 800 600 12 V 600 400 400 10 V 9V 8V 200 200 0 1 FF 600 R 16 KF4 / 1 2 3 4 vCE [V] 5 0 1 FF 600 R 16 KF4 / 2 2 3 4 vCE [V] 5 Bild / Fig. 1 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) VGE = 15 V t vj = 25C t vj = 125C Bild / Fig. 2 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) tvj = 125C 1200 iC [A] 1000 tvj = 125 C 25 C 1400 iC1200 [A] 1000 800 800 600 600 400 400 200 200 0 5 6 7 8 9 10 FF 600 R 16 KF4 / 3 11 vGE [V] 12 0 0 FF 600 R 16 KF4 / 4 500 1000 1500 vCE [V] 2000 Bild / Fig. 3 Ubertragungscharakteristik (typisch) / Transfer characteristic (typical) VCE = 20 V Bild / Fig. 4 Ruckwarts-Arbeitsbereich / Reverse biased safe operating area tvj = 125 C vLF = vLR = 15 V RG = 3,3 FF 600 R 16 KF4 10 -1 Diode 7 1200 iF [A] 1000 Z(th)JC [C/W] 3 2 IGBT 800 10 -2 600 7 5 4 3 2 400 200 10 -3 10-3 2 3 4 5 7 10-2 2 3 4 5 7 10 -1 2 3 4 5 7 100 2 FF 600 R 16 KF4 / 5 t [s] 3 4 5 7 101 0 0 0,5 1 1,5 2 2,5 FF 600 R 16 KF4 / 6 3 vF [V] 3,5 Bild / Fig. 5 Transienter innerer Warmewiderstand (DC) / Transient thermal impedance (DC) Bild / Fig. 6 Durchlakennlinie der Inversdiode (typisch) / Forward characteristic of the inverse diode (typical) tvj = 25C tvj = 125C Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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