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| IGBT MODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base). C C 6-M8 3-M4 8-7 G Weight: 1,200 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M6) Notes: (1)Recommended Value 1.80.2/91N.m CHARACTERISTICS Item (Tc=25C ) Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time VCE=3,300V,VGE=0V VGE=20V,VCE=0V IC=1,200A,VGE=15V VCE=10V, IC =1,200mA VCE=10V,VGE=0V,f=100KHz VCC=1,650V,Ic=1,200A ms L=100nH RG=3.3W (3) VGE=15V Tc=125C -Ic=1,200A,VGE=0V V ms Vcc=1,650V,-Ic=1,200A,L=100nH, Tc=125C (4) C/W Thermal Impedance IGBT Rth(j-c) 0.008 Junction to case FWD Rth(j-c) 0.016 Notes:(3) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. (4) Counter arm IGBT VGE=-15V w w w t a .D Symbol I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr S a Unit mA nA V V nF W C C VRMS N.m e h A A V V U t4 e E E TERMINALS .c C E m o C E MBN1200D33A 3,300 20 1,200 2,400 1,200 2,400 12,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 6 (1) (2) (2)Recommended Value 5.50.5N.m Min. 4.0 - Typ. 4.1 5.5 150 1.6 2.3 2.4 3.9 2.8 0.8 Max. 12.0 500 5.0 7.0 2.6 3.2 3.2 5.6 3.7 1.4 Test Conditions w w w .D a aS t ee h 4U t om .c PDE-N1200D33A-0 2000 Tc=25C TYPICAL 2000 Tc=125C VGE=15V 13V TYPICAL 11V VGE=15V 13V 11V 1500 1500 Collector Current, Ic (A) 9V 1000 Collector Current, Ic (A) 1000 9V 500 500 7V 7V 5V 5V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 2000 VGE=0 Tc=25C Tc=125C TYPICAL Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 1000 Tc=25C TYPICAL Forward Current, IF (A) 1500 Cies Cies, Coes, Cres(nF) 100 1000 Coes 10 500 Cres 0 0 1 2 3 4 5 1 0.1 1 10 100 Forward Voltage, VF (V) Forward voltage of free-wheeling diode 5.0 4.5 TYPICAL [Conditions] VCC=1650V Lp100nH RG=3.3 VGE=15V Tc=125C Inductive Load 2.0 Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage TYPICAL [Conditions] VGE=15V, RG=3.3 VCC=1650V, Lp100nH, Tc=125C, Inductive Load VCE IC Switching Time, td(on), tr, td(off), tf,trr (s) Eon(full) 4.0 3.5 3.0 2.5 2.0 td(off) Turn-on Loss Eon (J/pulse) 1.5 0 0 10% 10% VGE Eon(10%) t1t3 t4 Eon(10%)= t3 t2 Eon(full)= t1 t4 t2 IC VCE dt IC VCE dt . . tf 1.0 1.5 1.0 0.5 0.0 0 tr 0.5 trr td(on) 500 1000 1500 0 0 500 1000 1500 Collector Current, IC(A) Switching time vs. Collector current Collector Current IC (A) Turn-on Loss vs. Collector Current PDE-N1200D33A-0 2.5 TYPICAL 2.5 [Conditions] Tc=125C VCC=1650V Lp100nH 0 RG=3.3 VGE=15V Inductive Load VCE IRM IC t9 t11 t12 Err(10%)= Err(full)= t9 t11 t10 t12 t10 10% 0.1 IRM t TYPICAL 2.0 Reverse Recovery Loss Err (J/pulse) 2.0 Turn-off Loss Eoff (J/pulse) Eoff(full) Eoff(10%) IC VCE dt IC VCE dt . . Err(full) 1.5 1.5 Err(10%) 1.0 [Conditions] Tc=125C VCC=1650V 0 Lp100nH 0 RG=3.3 VGE=15V Inductive Load IC VCE 1.0 10% VGE 10% 0.5 t 0.5 t5 t7 Eoff(10%)= Eoff(full)= . t7 t6 IC.VCE dt t5 t8 t8 t6 IC VCE dt 0.0 0 500 1000 1500 0.0 0 500 1000 1500 Collector Current IC (A) Turn-off Loss vs. Collector Current TYPICAL 0.1 Collector Current IC (A) Reverse Recovery Loss vs. Collector Current Transient Thermal Impedance, Rth(j-c) (C/W) Diode 0.01 IGBT 0.001 0.0001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-N1200D33A-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse |
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