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Type
BSZ22DN20NS3 G
$(*'#$%TM3 Power-Transistor
Features 9 /2* * &% ' % $ % $ $ .- 4&0 * , 7 .0 1.9 $ )" - - &+ - .0 " ++ , &4&+ 9 6 &+&- 2 (" 2& $ )" 0 6 R DS(on) product (FOM) $+ (& 9 .5 .- 0 * 2" - $ & R DS(on) &11 9
8 ./&0 2* ( 2&, /&0 230 ""& 9 # ' && + % /+ 2* ( . 0 &" "$ ., /+" - 2 *
1)
Product Summary VDS RDS(on),max ID 200 225 7 V m# A
PG-TSDSON-8
9 3" +'&% " $ $ .0 * ( 2. ** %-
for target application
9 " + .(&- ' && " $ $ .0 * ( 2. 0 %-
Type BSZ22DN20NS3 G
Package PG-TSDSON-8
Marking 22DN20N
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 7.0 4.9 28 30 20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 C I D=3.5 A, R GS=25 #
mJ V W C
T C=25 C
34 -55 ... 150 55/150/56
J-STD20 and JESD22 see figure 3
Rev. 2.1
page 1
2010-09-01
BSZ22DN20NS3 G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) 3.7 60 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=13 A V DS=160 V, V GS=0 V, T j=25 C V DS=160 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=3.5 A V GS=20 V, V DS=0 V V GS=10 V, I D=3.5 A 200 2 3 0.1 4 1 A V
3.5
10 1 194 1.6 7
100 100 225 nA m# # S
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.1
page 2
2010-09-01
BSZ22DN20NS3 G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
Values typ. max.
Unit
C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=3.5 A, R G=1.6 # V GS=0 V, V DS=100 V, f =1 MHz
-
320 24 5.1 4 4 6 3
430 32 -
pF
ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=3.5 A, V GS=0 to 10 V
-
1.4 0.8 1.3 4.2 4.5 8
5.6 11
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=7 A, T j=25 C V R=100 V, I F=I S, di F/dt =100 A/s -
1 70 156
7 28 1.2 -
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2010-09-01
BSZ22DN20NS3 G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS:
!
40
8
7
30
6
5
Ptot [W]
ID [A]
20
4
3
10
2
1
0 0 40 80 120 160
0 0 40 80 120 160
TC [&C]
TC [&C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
102
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
1 s
101
10 s
0.5
ZthJC [K/W]
ID [A]
100
0.2
100 s 1 ms
0.1 0.05 0.02
100
10 ms
0.01 single pulse
DC
10-1 10-1 100 101 102 103
10-1 10-5 10-4 10-3 10-2 10-1 100
VDS [V]
tp [s]
Rev. 2.1
page 4
2010-09-01
BSZ22DN20NS3 G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
20
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
320
10 V
280
5V
15
7V 6V
240
5.5 V 6V 8V 10 V
200
5.5 V
10
RDS(on) [m ]
5
ID [A]
160
120
5V
5
80
4.5 V
40
0 0 1 2 3 4
0 0 2 4 6 8
VDS [V]
ID [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
16
8 Typ. forward transconductance g fs=f(I D); T j=25 C
16
14
14
12
12
10
10
8
gfs [S]
150 C 25 C
ID [A]
8
6
6
4
4
2
2
0 0 2 4 6 8
0 0 5 10 15
VGS [V]
ID [A]
Rev. 2.1
page 5
2010-09-01
BSZ22DN20NS3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=3.5 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
600 4
3.5 500
130 A
3 400
13 A
RDS(on) [m ]
2.5
300
98 %
VGS(th) [V]
typ
2
1.5
200
1 100 0.5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
Tj [&C]
Tj [&C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
100
Ciss
102
Coss
10
25 C
C [pF]
IF [A]
150 C, 98%
101
Crss
1
150 C
25 C, 98%
100 0 40 80 120 160
0.1 0 0.5 1 1.5 2
VDS [V]
VSD [V]
Rev. 2.1
page 6
2010-09-01
BSZ22DN20NS3 G
13 Avalanche characteristics I AS=f(t AV); R GS=25 # parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=3.5 A pulsed parameter: V DD
10
160 V
8
100 V
6
VGS [V]
40 V
4
2
0 0 1 2 3 4 5
Qgate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
230
220
VBR(DSS) [V]
210
200
190
180 -60 -20 20 60 100 140 180
Tj [&C]
BSZ22DN20NS3 G
Package Outline:PG-TSDSON-8
Rev. 2.1
page 8
2010-09-01
BSZ22DN20NS3 G
' $ (,%-0 2 & (4$ , (, 2 (1 # -" 3 + $ ,2 * (, ,- $ 4$ ,2 $ 0 & 0 $ # + (-, ' 1' * !$ # 4 * $ 1 12 2 # ' $ 0 (, ,# -0 ,7 (,%-0 2 0 & 0 (,& 2 $ 3 $ $ + (-, $ # ' ,%(,$ -, $ " ' ,-* ($ 1 ' $ 0 ! 7 # (1" * (+ 1 ,7 ,# -& $ -% ,7 2 (0 . 07 '# 2
1
& 3 0 ,2 $ -% $
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(," * # (,& 5(2 -3 2(+ (2 2 5 0 ,2 1 -% ,-,
(,%0 $ + $ ,2 (,2 *$ " 2 *.0 07 0 ' 2 3 ' * (-, 0 ($ (,& -% $ * 3 -.$ 2 (& 1
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3 $ 2 2 " ' ,(" *0 /3 (0 + $ ,2 " -+ .-,$ ,2 + 7 " -,2 (, # ,& $ 0 1 13 ! 12 ," $ 1 -0(,%-0 2 -$ $ $ 1 1 -3 + (-, -, 2 $ 2 1 (, /3 $ 12 .* 1$ " -,2 " 2 ' $ ,$ 0 12 ' 7.$ (-, $ 2 $ ,%(,$ -, $ " ' ,-* ($ 1 %%(" $ -& ,%(,$ -, $ " ' ,-* ($ 1 " -+ .-,$ ,2 + 7 ! $ 3 1$ # (, *
13 ..-0 # $ 4(" $ 1 -01712 + 1 -,* 5(2 -& 1 (%$ 2 $ 7' 2 $ $ 6 $ 11 50 2 , ..0 *-% ,%(,$ -, $ " ' ,-* ($ 1 (% ' .0 (2 $ -4 -& % (* 0 -% 13 " ' " -+ .-,$ ,2 " , 3$ 1 0 1-, ! * ! $ $ 6 " 2 # 2 " 3 1$ 2 $ % (* 0 -% 2 2(%$
13 ..-0 # $ 4(" $ -01712 + -02 %%$ " 2 $ 7 .$ $ ' 3$ '* 2 $ 2 $ 1 %$ 2 -0$ %%$ " 2 ,$ 11 -% 2 2 $ 4(" $ -01712 + (%$ 13 ..-0 # $ 4(" $ 1 -01712 + 1 0 ' 7 (4$ '# $ 2 $ $ (,2 ,# $ # 2 ! $ (+ .* ,2 # (, 2 $ ' 3 + , ! -# 7 -02 13 ..-0 ,# -0+ (,2 (, ,# 13 12 (, $ $ ' 2
Rev. 2.1
page 9
2010-09-01

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