View BSC12DN20NS3G_90955.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Type
BSC12DN20NS3 G
$(*'#$%TM3 Power-Transistor
Features 9 /2* * &% ' % $ % $ $ .- 4&0 * , 7 .0 1.9 $ )" - - &+ - .0 " ++ , &4&+ 9 6 &+&- 2 (" 2& $ )" 0 6 R DS(on) product (FOM) $+ (& 9 .5 .- 0 * 2" - $ & R DS(on) &11
Product Summary VDS RDS(on),max ID 200 125 11.3 V m# A
PG-TDSON-8 9
8 ./&0 2* ( 2&, /&0 230 ""& 9 # ' && + % /+ 2* ( . 0 &" "$ ., /+" - 2 *
1)
9 3" +'&% " $ $ .0 * ( 2. ** %-
for target application
9 " + .(&- ' && " $ $ .0 * ( 2. 0 %-
Type BSC12DN20NS3 G
Package PG-TDSON-8
Marking 12DN20NS
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 11.3 8.0 45 60 20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 C I D=5.7 A, R GS=25 #
mJ V W C
T C=25 C
50 -55 ... 150 55/150/56
J-STD20 and JESD22 see figure 3
Rev. 2.1
page 1
2010-09-01
BSC12DN20NS3 G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) 2.5 50 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=25 A V DS=160 V, V GS=0 V, T j=25 C V DS=160 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=5.7 A V GS=20 V, V DS=0 V V GS=10 V, I D=5.7 A 200 2 3 0.1 4 1 A V
6
10 1 108 1.9 12
100 100 125 nA m# # S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
3)
Rev. 2.1
page 2
2010-09-01
BSC12DN20NS3 G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
Values typ. max.
Unit
C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=5.7 A, R G=1.6 # V GS=0 V, V DS=100 V, f =1 MHz
-
510 39 5.1 6 4 10 3
680 52 -
pF
ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=5.7 A, V GS=0 to 10 V
-
2.3 1.1 1.8 6.5 4.5 14
8.7 19
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=11.3 A, T j=25 C V R=100 V, I F=I S, di F/dt =100 A/s -
1 74 208
11.3 45 1.2 -
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2010-09-01
BSC12DN20NS3 G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS:
!
60
12
50
10
40
8
Ptot [W]
ID [A]
30
6
20
4
10
2
0 0 40 80 120 160
0 0 40 80 120 160
TC [&C]
TC [&C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
102
1 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
10 s
100 s
101
ZthJC [K/W]
1 ms
0.5
ID [A]
10 ms
100
0.2
DC
100
0.1 0.05 0.02 0.01 single pulse
10-1 10-1 100 101 102 103
10-1 10-5 10-4 10-3 10-2 10-1 100
VDS [V]
tp [s]
Rev. 2.1
page 4
2010-09-01
BSC12DN20NS3 G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
25
10 V 7V 6V 5.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
200
20
160
5V 5.5 V 6V
RDS(on) [m ]
15
120
8V 10 V
ID [A]
5V
10
80
5
4.5 V
40
0 0 1 2 3 4 5
0 0 4 8 12 16
VDS [V]
ID [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
25
8 Typ. forward transconductance g fs=f(I D); T j=25 C
20
20
16
15
12
ID [A]
10
gfs [S]
8 5
150 C 25 C
4
0 0 2 4 6 8
0 0 4 8 12 16
VGS [V]
ID [A]
Rev. 2.1
page 5
2010-09-01
BSC12DN20NS3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=5.7 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
350 4
300
3.5
250 A
250
3
25 A
RDS(on) [m ]
2.5
98%
VGS(th) [V]
140 180
200
2
150
typ
1.5 100 1 50
0.5
0 -60 -20 20 60 100
0 -60 -20 20 60 100 140 180
Tj [&C]
Tj [&C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
Ciss
100
25 C
150C 98%
102
Coss
10
C [pF]
IF [A]
150 C
101
Crss
1
25C 98%
100 0 40 80 120 160
0.1 0 0.5 1 1.5 2
VDS [V]
VSD [V]
Rev. 2.1
page 6
2010-09-01
BSC12DN20NS3 G
13 Avalanche characteristics I AS=f(t AV); R GS=25 # parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=5.7 A pulsed parameter: V DD
10
160 V
8
100 V
6
40 V
VGS [V]
4 2 0 0 1 2 3 4 5 6 7
Qgate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
230
220
VBR(DSS) [V]
210
200
190
180 -60 -20 20 60 100 140 180
Tj [&C]
BSC12DN20NS3 G
Package Outline:PG-TDSON-8
Rev. 2.1
page 8
2010-09-01
BSC12DN20NS3 G
' $ (,%-0 2 & (4$ , (, 2 (1 # -" 3 + $ ,2 * (, ,- $ 4$ ,2 $ 0 & 0 $ # + (-, ' 1' * !$ # 4 * $ 1 12 2 # ' $ 0 (, ,# -0 ,7 (,%-0 2 0 & 0 (,& 2 $ 3 $ $ + (-, $ # ' ,%(,$ -, $ " ' ,-* ($ 1 ' $ 0 ! 7 # (1" * (+ 1 ,7 ,# -& $ -% ,7 2 (0 . 07 '# 2
1
& 3 0 ,2 $ -% $
" -,# (2 (-,1 -0" ' 0 " 2 0 (" 1 (2 0 1.$ " 2 - ,7 $ 6 + .* 1 -0' (,2 & (4$ , ' $ 0 (, ,7 2 $ (12 '$ 2 $ 1 $ 7.(" * ..* 2 -% 2 $ # $ 4(" $ (" (-, ' * 5 0 ,2 1 ,# * ! (* ($ 1 -% ,7 )(,# * 0 ($ ( (2
(," * # (,& 5(2 -3 2(+ (2 2 5 0 ,2 1 -% ,-,
(,%0 $ + $ ,2 (,2 *$ " 2 *.0 07 0 ' 2 3 ' * (-, 0 ($ (,& -% $ * 3 -.$ 2 (& 1
-0%3 0' $ 0(,%-0 2 -, 2 " ' ,-* 7 # $ * 0 2 0 1 ,# " -,# (2 2 + (-, $ -& (4$ 7 $ + (-,1 ,# .0 $ 1 .* 1$ (" $ " -,2 " 2 ' $ ,$ 0 12 2 $ ,%(,$ -, $ " ' ,-* ($ 1 %%(" $ 555(,%(,$ -," -+ ' -&
3 $ 2 2 " ' ,(" *0 /3 (0 + $ ,2 " -+ .-,$ ,2 + 7 " -,2 (, # ,& $ 0 1 13 ! 12 ," $ 1 -0(,%-0 2 -$ $ $ 1 1 -3 + (-, -, 2 $ 2 1 (, /3 $ 12 .* 1$ " -,2 " 2 ' $ ,$ 0 12 ' 7.$ (-, $ 2 $ ,%(,$ -, $ " ' ,-* ($ 1 %%(" $ -& ,%(,$ -, $ " ' ,-* ($ 1 " -+ .-,$ ,2 + 7 ! $ 3 1$ # (, *
13 ..-0 # $ 4(" $ 1 -01712 + 1 -,* 5(2 -& 1 (%$ 2 $ 7' 2 $ $ 6 $ 11 50 2 , ..0 *-% ,%(,$ -, $ " ' ,-* ($ 1 (% ' .0 (2 $ -4 -& % (* 0 -% 13 " ' " -+ .-,$ ,2 " , 3$ 1 0 1-, ! * ! $ $ 6 " 2 # 2 " 3 1$ 2 $ % (* 0 -% 2 2(%$
13 ..-0 # $ 4(" $ -01712 + -02 %%$ " 2 $ 7 .$ $ ' 3$ '* 2 $ 2 $ 1 %$ 2 -0$ %%$ " 2 ,$ 11 -% 2 2 $ 4(" $ -01712 + (%$ 13 ..-0 # $ 4(" $ 1 -01712 + 1 0 ' 7 (4$ '# $ 2 $ $ (,2 ,# $ # 2 ! $ (+ .* ,2 # (, 2 $ ' 3 + , ! -# 7 -02 13 ..-0 ,# -0+ (,2 (, ,# 13 12 (, $ $ ' 2
Rev. 2.1
page 9
2010-09-01

▲Up To Search▲

Price & Availability of BSC12DN20NS3G

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1 50Y1813	Infineon Technologies AG	Mosfet Transistor, N Channel, 11.3 A, 200 V, 0.108 Ohm, 10 V, 3 V Rohs Compliant: Yes \|Infineon BSC12DN20NS3GATMA1	1000: USD0.685 500: USD0.841 250: USD0.917 100: USD0.993 50: USD1.09 25: USD1.19 10: USD1.28 1: USD1.56	2238

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1 BSC12DN20NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON	10000: USD0.52112 5000: USD0.54634 2000: USD0.57366 1000: USD0.60938 500: USD0.74806 100: USD0.8825 10: USD1.135 1: USD1.39	10832

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GXT BSC12DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)		5000

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3G 726-BSC12DN20NS3G	Infineon Technologies AG	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3	1: USD1.5 10: USD1.2 100: USD0.864 500: USD0.809 1000: USD0.621 5000: USD0.591 10000: USD0.564	5140
BSC12DN20NS3 G 726-BSC12DN20NS3GATM	Infineon Technologies AG	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3	1: USD1.5 10: USD1.23 100: USD0.956 500: USD0.81 1000: USD0.66 5000: USD0.563	5440

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1 V72:2272_06384558	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R	250: USD0.5775 100: USD0.6399 25: USD0.6445 10: USD0.6492 1: USD0.7918	310

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1 69264362	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R	10000: USD0.6925 5000: USD0.7088 2000: USD0.7275 1000: USD0.7725 500: USD0.8538 200: USD0.8563 100: USD0.9063 50: USD1.0763 27: USD1.1575	12800
BSC12DN20NS3GATMA1 71239588	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R	43: USD0.735	4990
BSC12DN20NS3GATMA1 69099936	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R	250: USD0.5775	310

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1	Infineon Technologies AG			2864

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1	Infineon Technologies AG		1900: USD0.677 887: USD0.7898 1: USD2.2565	2291

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3G SMC-BSC12DN20NS3G	Infineon Technologies AG	Mosfet N-Ch 200V 11.3A Tdson-8 Optimos 3	1000: USD0.816 500: USD0.816 100: USD0.816	10

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1 C1S322000410729	Infineon Technologies AG	MOSFET	10: USD0.588 1: USD0.649	4990
BSC12DN20NS3GATMA1 C1S322000899449	Infineon Technologies AG	MOSFET	10000: USD0.554 5000: USD0.567 2000: USD0.582 1000: USD0.618 500: USD0.683 200: USD0.685 100: USD0.725 50: USD0.861 10: USD0.926 1: USD1.38	12800

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1	Infineon Technologies AG	Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies UPS and inverters for DC motor drives.	1: USD1.23821	188

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1 SP000781774	Infineon Technologies AG	Power MOSFET, N Channel, 200 V, 11.3 A, 0.108 ohm, TDSON, Surface Mount (Alt: SP000781774)		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BSC12DN20NS3GATMA1	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON	18: USD2.826 44: USD2.319 67: USD2.247 92: USD2.174 119: USD2.102 160: USD1.884	30000

	To Download BSC12DN20NS3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .