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| CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 1/6 MTN75N75HE3 Description BVDSS RDSON ID 75V 11 m 80A The MTN75N75HE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features * High Density Cell Design for Ultra Low On-Resistance * Simple Drive Requirement * High Power and Current Handling Capability * Fast Switching Characteristic * RoHS compliant package Symbol MTN75N75HE3 Outline TO-220 GGate DDrain SSource GDS MTN75N75HE3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C) Parameter Symbol Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 2/6 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, IAS=57 A, RG=25,VDD=25V Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Range Note : *1.Pulse width limited by safe operating area VDS VGS ID ID IDM IAS EAS Pd Tj, Tstg 75 20 80 56 300 57 800 137 1.09 -55~+150 V V A A A A mJ W W/C C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 0.91 62.5 Unit C/W C/W MTN75N75HE3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. 2.7 9.5 72 117 27 47 25 100 66 30 3457 771 170 53 143 Max. 4.0 100 1 5 11 80 1.5 Unit V V nA A A A m S nC Test Conditions Static BVDSS 75 VGS(th) 2.0 IGSS IDSS IDSS IDON 80 RDS(ON) GFS Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Source-Drain Diode IS VSD trr Qrr - Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 3/6 VGS=0, ID=250A VDS = VGS, ID=250A VGS=20 VDS =75V, VGS =0 VDS =60V, VGS =0, Tj=55C VDS =10V, VGS=10V (Note 1) VGS =10V, ID=40A (Note 1) VDS =15V, ID=40A (Note 1) VDS=80V, ID=60A, VGS=10V (Note 1 & 2) ns VDS=37.5V, ID=45A, VGS=10V, RGS=4.7 (Note 1 & 2) VGS=0V, VDS=25V, f=1MHz pF A V ns nC VD=VG=0V, VS=1.5V IS=75A, VGS=0V (Note 3) (Note 1) VGS=0, IS=30A, dIF/dt=100A/s Note : 1. Pulse Test : Pulse Width 300s, Duty Cycle2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. Ordering Information Device MTN75N75HE3 Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking 75N75H MTN75N75HE3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 4/6 MTN75N75HE3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 5/6 MTN75N75HE3 CYStek Product Specification CYStech Electronics Corp. TO-220 Dimension Marking: E C Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 6/6 A D B H I G 4 P M 3 2 1 N K Device Name 75N75H Date Code O 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical DIM A B C D E G H Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: KFC ; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN75N75HE3 CYStek Product Specification |
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