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| IPP60R099CP CoolMOSTM Power Transistor Features * Worldwide best R ds,on in TO220 * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V nC PG-TO220 CoolMOS CP is specially designed for: * Hard switching SMPS topologies for Server and Telecon Type IPP60R099CP Package PG-TO220 Ordering Code SP000057021 Marking 6R099 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.2 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 C T C=25 C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 31 19 93 800 1.2 11 50 20 30 255 -55 ... 150 60 W C Ncm 2007-08-28 A V/ns V mJ Unit A IPP60R099CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 18 93 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA T sold leaded 1.6 mm (0.063 in.) from case for 10 s 0.5 62 260 C K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V GS(th) V DS=V GS, I D=1.2 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=18 A, T j=25 C V GS=10 V, I D=18 A, T j=150 C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 V Zero gate voltage drain current I DSS - - 5 A - 50 0.09 100 0.099 nA - 0.24 1.3 Rev. 2.2 page 2 2007-08-28 IPP60R099CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 2800 130 130 - pF V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 340 10 5 60 5 ns Q gs Q gd Qg V plateau V DD=400 V, I D=18 A, V GS=0 to 10 V - 14 20 60 5.0 80 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=18 A, T j=25 C - 0.9 450 12 70 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD<=ID, di/dt<=100A/s,VDClink = 400V, Vpeak 3) 4) 5) 6) Rev. 2.2 page 3 2007-08-28 IPP60R099CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 300 102 limited by on-state resistance 10 s 1 s 100 s 200 101 DC 1 ms P tot [W] I D [A] 10 ms 100 100 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z thJC=f(t P) parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 120 10 V 20 V 8V 105 0.5 90 7V 75 Z thJC [K/W] 0.2 10-1 0.1 I D [A] 60 6V 0.05 0.02 0.01 single pulse 45 5.5 V 30 5V 15 4.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.2 page 4 2007-08-28 IPP60R099CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 50 8V 10 V 20 V 6V 5.5 V 7V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 0.5 40 0.4 5.5 V 6V 6.5 V 7V R DS(on) [] 30 0.3 5V 20 V I D [A] 5V 20 4.5 V 0.2 10 0.1 0 0 5 10 15 20 0 0 10 20 30 40 50 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=18 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 160 0.25 120 0.2 C 25 R DS(on) [] 0.15 98 % I D [A] 80 0.1 typ C 150 40 0.05 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.2 page 5 2007-08-28 IPP60R099CP 9 Typ. gate charge V GS=f(Q gate); I D=18 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 C, 98% 150 C, 98% 8 120 V 400 V 150 C 25 C 101 6 V GS [V] 4 100 2 I F [A] 0 0 10 20 30 40 50 60 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=11 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 1000 700 750 660 500 V BR(DSS) [V] 20 60 100 140 180 E AS [mJ] 620 250 580 0 540 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.2 page 6 2007-08-28 IPP60R099CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 20 104 Ciss 16 Coss 10 2 E oss [J] 8 4 0 200 300 400 500 103 12 C [pF] 101 Crss 100 0 100 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.2 page 7 2007-08-28 IPP60R099CP Definition of diode switching characteristics Rev. 2.2 page 8 2007-08-28 IPP60R099CP PG-TO220-3-1/TO220-3-21: Outlines Dimensions in mm/inches: Rev. 2.2 page 9 2007-08-28 IPP60R099CP Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 2007-08-28 |
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