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SM6K2
Transistors
4V Drive Nch+Nch MOS FET
SM6K2
Structure Silicon N-channel MOSFET transistor External dimensions (Unit : mm)
SMT6
2.9 1.9 0.95 0.95 1.1 0.8
(4)
(5)
(6)
Features 1) Two RHU002N06 chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating mutual interference. 4) Mounting cost and area can be cut in half.
1.6
(3) (2) (1)
2.8
1pin mark 0.3 0.15
Each lead has same dimensions Abbreviated symbol : K2
Packaging specifications
Package Code Type SM6K2 Basic ordering unit (pieces) Taping T110 3000
Equivalent circuit
(4) (5)
1
(6)
2 (1) TR1 Drain (2) TR2 Gate (3) TR2 Source (4) TR2 Drain (5) TR1 Gate (6) TR1 Source
2
1
(3)
(2)
(1)
1 Gate Protection Diode 2 Body Diode
A protection diode has been built in between the gate
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Drain reverse current Continuous Pulsed Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP IDR IDRP PD Tch Tstg
1 2 1
and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded.
Limits 60 20 200 800 200 800 300 200 150 -55 to +150
Unit V V mA mA mA mA mW / TOTAL mW / ELEMENT C C
1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands.
Thermal resistance
Parameter Channel to ambient
With each pin mounted on the recommended lands.
Symbol Rth(ch-a)
Limits 416.7 625
Unit C / W / TOTAL C / W / ELEMENT
Rev.B
0.3Min.
1/4
SM6K2
Transistors
Electrical characteristics (Ta=25C)
Parameter Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Symbol IGSS V (BR) DSS IDSS VGS (th)

Min. - 60 - 1 - - 0.1 - - -
Typ. - - - - 1.7 2.8 - 15 8 4 6 5 12 95 2.2 0.6 0.3
Max. 10 - 1 2.5 2.4 4.0 - - - - - - - - 4.4 - -
Unit A V A V S pF pF pF ns ns ns ns nC nC nC
Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=10V ID=200mA, VGS=4V VDS=10V, ID=200mA VDS=10V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=10V RL=300 RG =10 VDD 30V VGS=10V ID=200mA
Drain-source on-state resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
l Yfs l Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

- - - - - - -
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS=200mA, VGS=0V
Rev.B
2/4
SM6K2
Transistors
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : VGS (th) (V)
0.8 10V 0.7 8V Ta=25C Pulsed
1
VDS=10V Pulsed
2.5
VDS=10V ID=1mA Pulsed
0.6 0.5
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
6V
2.0
0.1 Ta=-25C 25C 75C 125C 0.01
4V 0.4 0.3 0.2 VGS=3V 0.1 0.0 0.0 0.5 3.5V
1.5
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE-SOURCE VOLTAGE : VGS (V)
0.0 -50 -25
0
25
50
75
100 125 150
DRAIN-SOURCE VOLTAGE : VDS (V)
CHANNEL TEMPERATURE : Tch (C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs. channel temperature
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
VGS=10V Pulsed
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
VGS=4V Pulsed Ta=125C 75C 25C -25C
7 6 5 4
ID=200mA Ta=25C Pulsed
Ta=125C 75C 25C -25C
3 2
100mA
1 0
1.0 0.01
0.1 DRAIN CURRENT : ID (A)
1.0
1.0 0.01
0.1 DRAIN CURRENT : ID (A)
1.0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static drain-source on-State resistance vs. drain current ( )
Fig.5 Static drain-source on-state resistance vs. drain current ( )
Fig.6 Static drain-source on-state resistance vs. gate-source voltage
3.0
1
REVERSE DRAIN CURRENT : IDR (A)
VGS=10V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
REVERSE DRAIN CURRENT : IDR (A)
VGS=0V Pulsed
10
Ta=25C Pulsed
2.5
ID=200mA
1
VGS=10V
0.1 Ta=125C 75C 25C -25C 0.01
2.0
0.1
0V
1.5
100mA
0.01
1.0 -50 -25
0
25
50
75
100 125 150
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
CHANNEL TEMPERATURE : Tch (C)
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state resistance vs. channel temperature
Fig.8 Reverse drain current vs. source-drain voltage ( )
Fig.9 Reverse drain current vs. source-drain voltage ( )
Rev.B
3/4
SM6K2
Transistors
FORWARD TRANSFER ADMITTANCE : I Yfs I (S)
1 VGS=10V Pulsed Ta=-25C 25C 75C 125C 0.01
100 Ta=25C f=1MHz VGS=0V
SWITCHING TIME : t (ns)
1000 Ta=25C VDD=30V VGS=10V RG=10 Pulsed
tf
100
0.1
CAPACITANCE : C (pF)
Ciss
10
td(off)
10
Coss Crss
td(on) tr
0.001 0.001
0.01
0.1
1
1 0.01
0.1
1
10
100
1 1
10
100
1000
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.10 Forward transfer admittance vs. drain current
Fig.11 Typical capacitance vs. drain-source voltage
Fig.12 Switching characteristics
Switching characteristics measurement circuit
Pulse width 50% 10% 10% 90% 50%
VGS
ID D.U.T. RL
VDS
VGS VDS
RG
10% 90% 90%
td (off) tf toff
VDD
td (on) ton tr
Fig.13 Switching time test circuit
Fig.14 Switching time waveforms
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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