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 Medium Power Transistor (60V, 2A)
2SD2391
Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561. Dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
(1)Base (2)Collector (3)Emitter
Absolute maximum ratings (Ta=25C)
Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg
+
Limits 60 60 6 2 6 0.5 2 150 -55 to +150
Unit V V V A A W
1 2
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
+
C C
1 Single pulse, Pw=10ms 2 When mounted on a 40 40 0.7mm ceramic board.
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Measured using pulse current
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob
Min. 60 60 6 - - - 120 45 - -
Typ. - - - - - 0.13 - - 210 21
Max. - - - 0.1 0.1 0.35 270 - - -
Unit V V V A A V - - MHz pF IC=50A IC=1mA IE=50A VCB=50V
Conditions
VEB=5V IC/IB=1A/50mA VCE/IC=-2V/-0.5A VCE/IC=-2V/-1.5A VCE=2V, IE=-0.5A, f=100MHz VCB=10V, IE=0A, f=1MHz
Packaging specifications and hFE
Type 2SD2391 MPT3 Q DT T100 1000
Denotes hFE
Package hFE Marking Code Basic ordering unit (pieces)
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c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.A
2SD2391
Electrical characteristic curves
2.0
Data Sheet
COLLECTOR CURRENT : lC (A)
COLLECTOR CURRENT : IC (A)
m 20
A
18
mA 16mA
14mA 12mA 10mA
5 2 1 500m
VCE=2V
1000 500
Ta=100C
VCE=2V
1.6
8mA 6mA
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2
25C
-40C
100m 50m 20m 10m 5m 2m 1m 0
0.8
4mA
0.4
IB=0mA
2mA
0.0
0
1
2
3
Ta=25C 4 5
Ta=1 0
1.2
200m
0C 25C -40C
0.2 0.4 0.6
0.8 1.0
1.2
1.4 1.6
1 10m 20m
50m 100m 200m 500m 1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Grounded emitter output characteristics
Fig.2 Grounded emitter propagation characteristics
Fig.3 DC current gain vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000 500
Ta=25C
1000 500 200 100 50
25C Ta=100C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
IC/IB=20
1000 500 200 100 50 20 10 5 2 1 5m 10m 20m 50m100m 200m 500m 1
IC/IB=50 20 10
Ta=25C
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 10m 20m 50m 100m 200m 500m 1
VCE=5V 2V 1V
20 10 5 2 1 5m 10m 20m
-40C
2
5 10
50m 100m 200m 500m 1
2
5
2
5
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
Fig.5 Collector-emitter saturation voltage vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current ( )
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
TRANSITION FREQUENCY : fT (MHz)
500 200 100 50 20 10 5 2 1 -2m -10m -100m
500 Cib 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 Cob
COLLECTOR CURRENT : lC (A)
Ta=25C VCE=2V
1000
Ta=25C f=1MHz IE=0A IC=0A
50 20 10 Ic max(Pulse) PW 5 = 2 1 500m
DC
10
=1 Pw
=1 PW s ms
0m
s
0m
200m 100m 50m
-1
-2
50 100
20m Ta=25C Single pulse 10m 0.2 0.5 1 2
5
10 20
50 100 200 500
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Iutput capacitance vs. voltage
Fig.9 Safe operating area
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c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev.A
Notice
Notes
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