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| FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V(BR)CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium power NPN transistor in a compact SOT23 package FEATURES * 80V V CEO * Compact SOT23 package SOT23 SYMBOL * HFE 50 @ IC = 100mA APPLICATIONS * Low power motor driving circuits ORDERING INFORMATION DEVICE FMMTA0 6 TA REEL SIZE 7" TAPE WIDTH 8mm QUANTITY PER REEL 3,000 PINOUT DEVICE MARKING * 1G TOP VIEW ISSUE 2 - MAY 2004 1 SEMICONDUCTORS FMMTA06 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Base current Power dissipation @ T A = 2 5 C Linear derating factor Operating and storage temperature SYMBOL V CBO V CEO V EBO I CM IC IB PD T j; T stg LIMIT 80 80 4 1 500 100 330 2.64 -55 to + 150 UNIT V V V A mA mA mW mW/ C C THERMAL RESISTANCE PARAMETER Junction to ambient SYMBOL R JA VALUE 379 UNIT C/W ISSUE 2 - MAY 2004 SEMICONDUCTORS 2 FMMTA06 CHARACTERISTICS ISSUE 2 - MAY 2004 3 SEMICONDUCTORS FMMTA06 ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Static forward current transfer ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CES I CBO H FE V CE(sat) V BE(on) fT 100 50 50 Collector-emitter saturation voltage Base-emitter turn-on voltage Transition frequency 0.25 1.2 V V 120 MIN. 80 80 4 100 100 TYP. MAX. UNIT CONDITIONS V V V nA nA I C = 1 mA I C = 1 0 mA* I E= 1 0 0 A V CES = 6 0 V V CB= 8 0 V I C = 1 0 mA, V CE= 1 V * I C = 1 0 0 mA, V CE= 1 V * IC = 1 0 0 mA, IB= 1 0 mA* I C = 0 . 1 A, V CE= 1 V * I C = 1 0 mA, V CE= 2 V , f= 1 0 0 MHz NOTES * Measured under pulsed conditions. Pulse width= 300 S. Duty cycle 2% ISSUE 2 - MAY 2004 SEMICONDUCTORS 4 FMMTA06 TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2004 5 SEMICONDUCTORS FMMTA06 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM A B C D F G Millimeters Min Max 2.67 3.05 1.20 1.40 1.10 0.37 0.53 0.085 0.15 1.90 NOM Inches Min Max 0.105 0.120 0.047 0.055 0.043 0.015 0.021 0.0034 0.0059 0.075 NOM DIM H K L M N Millimeters Min Max 0.33 0.51 0.01 0.10 2.10 2.50 0.45 0.64 0.95 NOM Inches Max Max 0.013 0.020 0.0004 0.004 0.083 0.0985 0.018 0.025 0.0375 NOM (c)Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - MAY 2004 SEMICONDUCTORS 6 |
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