 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1.5V Drive Pch +SBD MOSFET TT8U1 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (1) (2) (3) (4) Abbreviated symbol : U01 Each lead has same dimensions Applications Switching Inner circuit Packaging specifications Package Type TT8U1 Code Basic ordering unit (pieces) Taping TR 3000 1 (1) Anode (2) Anode (3) Source (4) Gate (5) Drain (6) Drain (7) Cathode (8) Cathode (8) (7) (6) (5) (1) (2) (3) (4) Absolute maximum ratings (Ta=25C) 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board 1 BODY DIODE Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch PD 2 Limits -20 10 2.4 9.6 -0.8 -9.6 150 1.0 Unit V V A A A A C W / ELEMENT 1 60HZ / 1Cycle 2 Mounted on a ceramic board Symbol VRM VR IF IFSM 1 Tj PD 2 Limits 30 20 1.0 3.0 150 1.0 Unit V V A A C W / ELEMENT Mounted on a ceramic board Symbol PD Tstg Limits 1.25 -55 to +150 Unit W / TOTAL C www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.06 - Rev.A TT8U1 Electrical characteristics (Ta=25C) Data Sheet Pulsed Pulsed Min. - Typ. - Max. -1.2 Unit V Conditions IS= -2.4A, VGS=0V VSD www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.06 - Rev.A TT8U1 Electrical characteristics curves 5 DRAIN CURRENT : -ID [A] Ta=25C Pulsed VGS= -10V VGS= -4.5V DRAIN CURRENT : -ID [A] 5 VGS= -10V 4 VGS= -4.5V 10 VDS= -10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C Data Sheet DRAIN CURRENT : -ID [A] 4 VGS= -2.5V VGS= -1.8V 1 3 3 VGS= -2.5V VGS= -1.8V 0.1 2 VGS= -1.5V 1 VGS= -1.4V 0 0 0.2 0.4 0.6 0.8 1 2 0.01 1 VGS= -1.5V VGS= -1.4V 0 2 4 6 Ta=25C Pulsed 8 10 0 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics() DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics() GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 100 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] Ta=25C Pulsed 1000 VGS= -4.5V Pulsed 1000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -2.5V Pulsed 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS= -1.8V Pulsed VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 1000 10 VDS= -10V Pulsed 100 Ta=125C Ta=75C Ta=25C Ta= -25C 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current() 10 0.1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 10 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.06 - Rev.A TT8U1 250 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m] 10000 Ta=25C Pulsed SWITCHING TIME : t [ns] 1000 tf 100 td (off) Data Sheet 10 REVERSE DRAIN CURRENT : -Is [A] VGS=0V Pulsed 200 Ta=25C VDD = -10V VGS= -4.5V R G=10 Pulsed 1 Ta=125C Ta=75C Ta=25C Ta=-25C 150 ID = -2.4A 100 ID = -1.2A 0.1 50 10 tr td(on) 0.1 1 10 0.01 0 0.5 1 1.5 0 0 2 4 6 8 10 1 0.01 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] 10000 REVERSE CURRENT : IR [mA] CAPACITANCE : C [pF] 4 Ciss 1000 Coss 100 Ta=25C f=1MHz VGS=0V 100 10 1 pulsed Ta = 125 3 Ta = 75 0.1 Ta = 25 0.01 0.001 0.0001 0 10 20 30 40 REVERSE VOLTAGE : VR [V] Fig.15 Reverse Current vs. Reverse Voltage 2 Ta=25C VDD = -10V ID = -2.4A R G=10 Pulsed 0 2 4 6 8 1 Crss 10 0.01 0.1 1 10 100 0 Ta= - 25 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 10000 FORWARD CURRENT : IF[mA] pulsed 1000 100 Ta = 125 Ta = 75 Ta= 25 Ta= - 25 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.16 Forward Current vs. Forward Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.06 - Rev.A TT8U1 Measurement circuits Pulse width ID VGS RL D.U.T. RG VDD VDS Data Sheet VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
Price & Availability of TT8U1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |