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To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE FK20UM-5 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 qwe wr q GATE w DRAIN e SOURCE r DRAIN e VDSS ................................................................................ 250V rDS (ON) (MAX) .............................................................. 0.24 ID ......................................................................................... 20A Integrated Fast Recovery Diode (MAX.) ........150ns q TO-220 APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 250 30 20 60 20 60 150 -55 ~ +150 -55 ~ +150 2.0 Unit V V A A A A W C C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 30 -- -- 2 -- -- 8.5 -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.19 1.9 13.0 1400 280 55 25 50 150 65 1.5 -- -- Max. -- -- 10 1 4 0.24 2.4 -- -- -- -- -- -- -- -- 2.0 0.83 150 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50 IS = 10A, VGS = 0V Channel to case IS = 20A, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 tw=10s 100s 1ms 10ms DC POWER DISSIPATION PD (W) 160 120 80 40 DRAIN CURRENT ID (A) TC = 25C Single Pulse 0 0 50 100 150 200 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 CASE TEMPERATURE TC (C) MITSUBISHI Nch POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE 50 OUTPUT CHARACTERISTICS (TYPICAL) PD = 150W VGS = 20V 10V TC = 25C Pulse Test 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V TC = 25C Pulse Test 5.5V DRAIN CURRENT ID (A) 40 DRAIN CURRENT ID (A) 7V 16 30 6V 20 5V 12 5V 8 PD = 150W 4 4.5V 4V 10 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 0.5 TC = 25C Pulse Test 16 ID = 40A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C Pulse Test 0.4 VGS = 10V 0.3 20V 0.2 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 12 8 20A 4 10A 0 0 4 8 12 16 20 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 24 3 2 TC = 25C 101 7 5 3 2 100 0 10 23 5 7 101 23 5 7 102 75C 16 125C 8 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) Ciss 103 7 5 3 2 102 7 5 Coss 3 2 102 7 5 3 2 101 100 23 Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 25 td(off) tf tr td(on) 5 7 101 23 5 7 102 Crss 3 Tch = 25C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 20 Tch = 25C ID = 20A 16 VDS = 50V 100V 200V 8 TC = 125C 32 VGS = 0V Pulse Test 25C 12 24 75C 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 0 50 100 150 200 250 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4 1.0 3 2 102 7 5 3 2 101 0 10 3 2 101 7 5 Irr Tch = 25C Tch = 150C 23 5 7 101 23 3 2 trr 0.8 0.6 0.4 -50 0 50 100 150 100 5 7 102 CHANNEL TEMPERATURE Tch (C) SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 20A VGS = 0V 3 3 VDD = 150V 2 2 trr 101 102 7 7 5 5 3 2 Irr 101 7 5 101 0 Tch = 25C 10 Tch = 150C 7 5 23 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 3 2 100 D=1 7 5 0.5 3 0.2 2 0.1 10-1 7 5 3 2 PDM tw 0.05 0.02 0.01 T D= tw T 23 5 7 102 Single Pulse 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) SOURCE CURRENT dis/dt (-A/s) REVERSE RECOVERY CURRENT Irr (A) Feb.1999 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = -100A /s 7 7 VGS = 0V 5 5 VDD = 150V |
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