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| MMBTA63LT1G, MMBTA64LT1G Darlington Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 BASE 1 Symbol VCES VCBO VEBO IC Value -30 -30 -10 -500 Unit Vdc Vdc Vdc mAdc 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 3 EMITTER 2 * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/C C/W MARKING DIAGRAM RqJA PD 2x M G G 1 = Device Code x = U for MMBTA63LT1 x = V for MMBTA64LT1 M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 2x 300 2.4 RqJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBTA63LT1G MMBTA64LT1G Package Shipping SOT-23 3,000 / Tape & Reel (Pb-Free) SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 4 1 Publication Order Number: MMBTA63LT1/D MMBTA63LT1G, MMBTA64LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -100 mAdc) Collector Cutoff Current (VCB = -30 Vdc) Emitter Cutoff Current (VEB = -10 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc) Collector -Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) Base - Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT 125 - MHz MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE 5,000 10,000 10,000 20,000 - - - - - - -1.5 -2.0 - V(BR)CEO ICBO IEBO -30 - - - -100 -100 Vdc nAdc nAdc Symbol Min Max Unit VCE(sat) VBE(on) Vdc Vdc http://onsemi.com 2 MMBTA63LT1G, MMBTA64LT1G 200 hFE , DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 -0.3 -10 V 25C VCE = -2.0 V -5.0 V TA = 125C -55C -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain -2.0 TA = 25C -1.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 TA = 25C -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K IB, BASE CURRENT (mA) IC = -10 mA -50 mA -100 mA -175 mA -300 mA -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 Figure 3. "On" Voltage Figure 2. Collector Saturation Region 10 |h FE |, HIGH FREQUENCY CURRENT GAIN VCE = -5.0 V f = 100 MHz TA = 25C 1 IC, COLLECTOR CURRENT (A) 1 ms 10 ms 4.0 3.0 2.0 1.0 0.4 0.2 0.1 100 ms 1s 0.01 Single Pulse Test @ TA = 25C 0.001 0.01 Thermal Limit 0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K IC, COLLECTOR CURRENT (mA) 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 Figure 4. High Frequency Current Gain Figure 5. Safe Operating Area http://onsemi.com 3 MMBTA63LT1G, MMBTA64LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MMBTA63LT1/D |
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