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RT3J55M
Composite Transistor For high speed switching Silicon P-channel MOSFET
DESCRIPTION
RT3J55M is a composite transistor built with two INJ0011AX chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25 0.65 0.2
Unitmm
FEATURE
Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth=-1.0-2.0V Low on Resistance. RDS(on)=7.0(TYP)ID=-100mA, VGS=-4.0V RDS(on)=4.8(TYP)ID=-100mA, VGS=-10V High speed switching. Small package for easy mounting.
0.65 2.0
0.65
High speed switching , Analog switching
Tr.1
00.1
APPLICATION
Tr.2
TERMINAL CONNECTOR SOURCE1 GATE1 DRAIN2 SOURCE2 GATE2 :DRAIN1 JEITASC-88
MAXIMUM RATING (Ta=25)
SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 50 UNIT V V mA mW
MARKING
Drain-source voltage Gate-source voltage Drain current Total power dissipationTa=25 Channel temperature Range of Storage temperature
20 -100
150 150 -55150
. C C
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
RT3J55M
Composite Transistor For high speed switching Silicon P-channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit
Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time
I D=-100A, V V V V
GS
=0V
-50 GS
145 7.0 4.8 25 6.0 35 90
10 -1.0 -2.0 -
V A A V mS pF pF ns
GS=20V, VDS=0V DS
=-50V ,VGS=0V
DS= V
I D=-250A, V
DS
-1.0 -
| Yfs |
RDS(on) Ciss Coss tON tOFF
=-10V, I D=-100mA
GS
I D=-100mA, V I D=-100mA, V V V V
DS
=-4.0V
GS=-10V
=-10V, V
GS
=0V,f=1MHz
DD=-5V , I D=-10mA GS=0-5V
Switching time test condition
test circuit
0 IN
OUT
0V
RL -5V 10s VDD=-5V D.U.1% Common source Ta=25 50 VDD
input waveform
-5V VDS(ON
10%
90%
output waveform
VDD
ton
90%
10%
tr toff tf
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Ta=25 -100
-3.0V -2.9V
ID -VDS -1
-2.7V
Ta=25
-2.8V -1.7V
IID -VDS(Low voltage region)
-1.65V
-80 Drain Current ID (mA)
-2.6V -2.5V
-0.8 Drain current ID (mA)
-1.6V
-60
-2.4V -2.3V VGS=-2.2V -2.1V
-0.6
-40
-0.4
-1.55V
-20
-2.0V -1.9V -1.7V
-0.2
VGS=-1.5V -1.45V
-0 -0 -5 Drain-Source voltage VDS (V)
-0 -10 -0 -0.1 -0.2 -0.3 -0.4 Drain-Source voltage VDS (V)
-1.4V
-0.5
IDR -VDS -100 Drain Reverse current IDR (mA) Ta=25 VGS=0V Drain current ID (mA) -1000 Ta=25 VDS=-10V -100
ID -VGS
-10
-10
-1 0 0.5 1 1.5 2 Drain-Source voltage VDS (V)
-1 -0 -1 -2 -3 -4 -5 Gate-Source voltage VGS (V)
|Yfs| - ID 1000 Drain-Source on-state resistance RDS(on) () Ta=25 VDS=-10V Forward transfer admittance |Yfs| (mS) 10 Ta=25 8 6 4 2 0 1 -1 -10 -100 Drain currentID (mA) -1000 -0 -50
RDS(ON) - ID
VGS=-4V
100
-10V
10
-100 Drain currentID (mA)
-150
-200
t - ID 10000 Ta=25
toff
C - VDS 100
Switching time t (ns)
1000
Ciss
Capacitance C (pF)
tf
10
Coss
100
ton
10
tr
1
Ta=25 VGS=0V 1 -0.1 -1 -10 -100 0.1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100
Drain current ID (mA)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Feb.2009

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