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HWD2190 1 Watt Audio Power Amplifier
General Description
The HWD2190 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1 watt of continuous average power to an 8 BTL load with less than 1% distortion (THD+N) from a 5VDC power supply. audio power amplifiers were designed specifically to provide high quality output power with a minimal amount of external components. The HWD2190 does not require output coupling capacitors or bootstrap capacitors, and therefore is ideally suited for mobile phone and other low voltage applications where minimal power consumption is a primary requirement. The HWD1 features a low-power consumption shutdown 290 mode, which is achieved by driving the shutdown pin with logic low. Additionally, the HWD2190 features an internal thermal shutdown protection mechanism. The HWD2190 contains advanced pop & click circuitry which eliminates noises which would otherwise occur during turn-on and turn-off transitions. The HWD2190 is unity-gain stable and can be configured by external gain-setting resistors.
Key Specifications
j PSRR at 217Hz, VDD = 5V (Fig. 1) j Power Output at 5.0V & 1% THD j Power Output at 3.3V & 1% THD j Shutdown Current
62dB(typ.) 1W(typ.) 400mW(typ.) 0.1A(typ.)
Features
n Available in space-saving packages: micro SMD, MSOP, SOIC, and LLP n Ultra low current shutdown mode n BTL output can drive capacitive loads n Improved pop & click circuitry eliminates noises during turn-on and turn-off transitions n 2.2 - 5.5V operation n No output coupling capacitors, snubber networks or bootstrap capacitors required n Thermal shutdown protection n Unity-gain stable n External gain configuration capability
Applications
n Mobile Phones n PDAs n Portable electronic devices
Connection Diagrams
8 Bump micro SMD
Top View Order Number HWD2190IBP, HWD2190IBPX
Connection Diagrams
(Continued) 9 Bump micro SMD
Top View Order Number HWD2190IBL, HWD2190IBLX LLP Package
Top View Order Number HWD2190LD
Mini Small Outline (MSOP) Package
Top View Order Number HWD2190MM Small Outline (SO) Package
Top View Order Number HWD2190M
Connection Diagrams
(Continued) 9 Bump micro SMD
Top View Order Number HWD2190ITL, HWD2190ITLX
Typical Application
FIGURE 1. Typical Audio Amplifier Application Circuit
Absolute Maximum Ratings
(Note 2)
JA (9 Bump micro SMD, Note 12) JC (MSOP) JA (MSOP) JA (LLP) Soldering Information
180C/W 56C/W 190C/W 220C/W
If Military/Aerospace specified devices are required, please contact the CSMSC Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (Note 11) Storage Temperature Input Voltage Power Dissipation (Note 3) ESD Susceptibility (Note 4) Junction Temperature Thermal Resistance JC (SOP) JA (SOP) JA (8 Bump micro SMD, Note 12) 35C/W 150C/W 220C/W 6.0V -65C to +150C -0.3V to VDD +0.3V Internally Limited 2000V 150C
See AN-1112 "microSMD Wafers Level Chip Scale Package." See AN-1187 "Leadless Leadframe Package (LLP)."
Operating Ratings
Temperature Range TMIN TA TMAX Supply Voltage -40C TA 85C 2.2V VDD 5.5V
Electrical Characteristics VDD = 5V (Notes 1, 2, 8) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25C.
HWD2190 Symbol IDD ISD VSDIH VSDIL VOS Parameter Quiescent Power Supply Current Shutdown Current Shutdown Voltage Input High Shutdown Voltage Input Low Output Ofsett Voltage 7 8.5 THD = 2% (max); f = 1 kHz 1.0 170 170 Po = 0.4 Wrms; f = 1kHz Vripple = 200mV sine p-p Input Terminated with 10 ohms to ground 8 load 0.1 62 (f = 217Hz) 66 (f = 1kHz) 1.0 55 Conditions VIN = 0V, Io = 0A, No Load VIN = 0V, Io = 0A, 8 Load VSHUTDOWN = 0V Typical (Note 6) 4 5 0.1 Limit (Notes 7, 9) 8 10 2.0 1.2 0.4 50 9.7 7.0 0.8 220 150 190 Units (Limits) mA (max) mA (max) A (max) V (min) V (max) mV (max) k (max) k (min) W ms (max) C (min) C (max) % dB (min)
ROUT-GND Resistor Output to GND (Note 10) Po TWU TSD THD+N PSRR Output Power ( 8 ) Wake-up time Thermal Shutdown Temperature Total Harmonic Distortion+Noise Power Supply Rejection Ratio (Note 14) Shut Down Time
TSDT
ms (max)
Electrical Characteristics VDD = 3V (Notes 1, 2, 8) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25C.
HWD2190 Symbol IDD ISD VSDIH VSDIL VOS Parameter Quiescent Power Supply Current Shutdown Current Shutdown Voltage Input High Shutdown Voltage Input Low Output Offset Voltage 7 8.5 120 Conditions VIN = 0V, Io = 0A, No Load VIN = 0V, Io = 0A, 8 Load VSHUTDOWN = 0V Typical (Note 6) 3.5 4.5 0.1 Limit (Notes 7, 9) 7 9 2.0 1.2 0.4 50 9.7 7.0 180 Units (Limits) mA (max) mA (max) A (max) V(min) V(max) mV (max) k (max) k (min) ms (max)
ROUT-GND Resistor Output to Gnd (Note 10) TWU Wake-up time
Electrical Characteristics VDD = 3V (Notes 1, 2, 8) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25C. (Continued)
HWD2190 Symbol Po TSD THD+N PSRR Parameter Output Power ( 8 ) Thermal Shutdown Temperature Total Harmonic Distortion+Noise Power Supply Rejection Ratio (Note 14) Po = 0.15Wrms; f = 1kHz Vripple = 200mV sine p-p Input terminated with 10 ohms to ground Conditions THD = 1% (max); f = 1kHz Typical (Note 6) 0.31 170 0.1 56 (f = 217Hz) 62 (f = 1kHz) 45 Limit (Notes 7, 9) 0.28 150 190 Units (Limits) W C(min) C(max) % dB(min)
Electrical Characteristics VDD = 2.6V (Notes 1, 2, 8) The following specifications apply for for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25C.
HWD2190 Symbol IDD ISD P0 THD+N PSRR Parameter Quiescent Power Supply Current Shutdown Current Output Power ( 8 ) Output Power ( 4 ) Total Harmonic Distortion+Noise Power Supply Rejection Ratio (Note 14) Conditions VIN = 0V, Io = 0A, No Load VSHUTDOWN = 0V THD = 1% (max); f = 1 kHz THD = 1% (max); f = 1 kHz Po = 0.1Wrms; f = 1kHz Vripple = 200mV sine p-p Input Terminated with 10 ohms to ground Typical (Note 6) 2.6 0.1 0.2 0.22 0.08 44 (f = 217Hz) 44 (f = 1kHz) Limit (Notes 7, 9) Units (Limits) mA (max) A (max) W W % dB
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified. Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, JA, and the ambient temperature TA. The maximum allowable power dissipation is PDMAX = (TJMAX-TA)/JA or the number given in Absolute Maximum Ratings, whichever is lower. For the HWD2190, see power derating curves for additional information. Note 4: Human body model, 100 pF discharged through a 1.5 k resistor. Note 5: Machine Model, 220 pF-240 pF discharged through all pins. Note 6: Typicals are measured at 25C and represent the parametric norm. Note 7: Limits are guaranteed to CSMSC's AOQL (Average Outgoing Quality Level). Note 8: For micro SMD only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a maximum of 2A. Note 9: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Note 10: ROUT is measured from each of the output pins to ground. This value represents the parallel combination of the 10k ohm output resistors and the two 20k ohm resistors. Note 11: If the product is in shutdown mode and VDD exceeds 6V (to a max of 8V VDD), then most of the excess current will flow through the ESD protection circuits. If the source impedance limits the current to a max of 10 ma, then the part will be protected. If the part is enabled when VDD is greater than 5.5V and less than 6.5V, no damage will occur, although operational life will be reduced. Operation above 6.5V with no current limit will result in permanent damage. Note 12: All bumps have the same thermal resistance and contribute equally when used to lower thermal resistance. All bumps must be connected to achieve specified thermal resistance. Note 13: Maximum power dissipation (PDMAX) in the device occurs at an output power level significantly below full output power. PDMAX can be calculated using Equation 1 shown in the Application section. It may also be obtained from the power dissipation graphs. Note 14: PSRR is a function of system gain. Specifications apply to the circuit in Figure 1 where AV = 2. Higher system gains will reduce PSRR value by the amount of gain increase. A system gain of 10 represents a gain increase of 14dB. PSRR will be reduced by 14dB and applies to all operating voltages.
External Components Description
Components 1. 2. RIN CIN
(Figure 1) Functional Description
Inverting input resistance which sets the closed-loop gain in conjunction with Rf. This resistor also forms a high pass filter with CIN at fC= 1/(2 RINCIN). Input coupling capacitor which blocks the DC voltage at the amplifier's input terminals. Also creates a highpass filter with RIN at fc = 1/(2 RINCIN). Refer to the section, Proper Selection of External Components, for an explanation of how to determine the value of CIN. Feedback resistance which sets the closed-loop gain in conjunction with RIN. Supply bypass capacitor which provides power supply filtering. Refer to the section, Power Supply Bypassing, for information concerning proper placement and selection of the supply bypass capacitor, CBYPASS.
3. 4.
Rf CS
5.
CBYPASS Bypass pin capacitor which provides half-supply filtering. Refer to the section, Proper Selection of External Components, for information concerning proper placement and selection of CBYPASS.
Typical Performance Characteristics
THD+N vs Frequency at VDD = 5V, 8 RL, and PWR = 250mW, AV = 2 THD+N vs Frequency at VDD = 3.3V, 8 RL, and PWR = 150mW, AV = 2
THD+N vs Frequency at VDD = 3V, RL = 8, PWR = 250mW, AV = 2
THD+N vs Frequency
@ VDD = 2.6V, RL = 8, PWR = 100mW, AV = 2
THD+N vs Frequency
@ VDD = 2.6V, RL = 4, PWR = 100mW, AV = 2
Typical Performance Characteristics
THD+N vs Power Out
@ VDD = 5V, RL = 8, 1kHz, AV = 2
(Continued) THD+N vs Power Out
@ VDD = 3.3V, RL = 8, 1kHz, AV = 2
THD+N vs Power Out
@ VDD = 3V, RL = 8, 1kHz, AV = 2
THD+N vs Power Out
@ VDD = 2.6V, RL = 8, 1kHz, AV = 2
THD+N vs Power Out
@ VDD = 2.6V, RL = 4, 1kHz, AV = 2
Typical Performance Characteristics
Power Supply Rejection Ratio (PSRR) @ AV = 2 VDD = 5V, Vripple = 200mvp-p RL = 8, RIN = 10
(Continued) Power Supply Rejection Ratio (PSRR) @ AV = 2 VDD = 5V, Vripple = 200mvp-p RL = 8, RIN = Float
Power Supply Rejection Ratio (PSRR) @ AV = 4 VDD = 5V, Vripple = 200mvp-p RL = 8, RIN = 10
Power Supply Rejection Ratio (PSRR) @ AV = 4 VDD = 5V, Vripple = 200mvp-p RL = 8, RIN = Float
Typical Performance Characteristics
Power Supply Rejection Ratio (PSRR) @ AV = 2 VDD = 3V, Vripple = 200mvp-p, RL = 8, RIN = 10
(Continued) Power Supply Rejection Ratio (PSRR) @ AV = 2 VDD = 3V, Vripple = 200mvp-p, RL = 8, RIN = Float
Power Supply Rejection Ratio (PSRR) @ AV = 4 VDD = 3V, Vripple = 200mvp-p, RL = 8, RIN = 10
Power Supply Rejection Ratio (PSRR) @ AV = 4 VDD = 3V, Vripple = 200mvp-p, RL = 8, RIN = Float
Power Supply Rejection Ratio (PSRR) @ AV = 2 VDD = 3.3V, Vripple = 200mvp-p, RL = 8, RIN = 10
Power Supply Rejection Ratio (PSRR) @ AV = 2 VDD = 2.6V, Vripple = 200mvp-p, RL = 8, RIN = 10
Typical Performance Characteristics
PSRR vs DC Output Voltage VDD = 5V, AV = 2
(Continued) PSRR vs DC Output Voltage VDD = 5V, AV = 4
PSRR vs DC Output Voltage VDD = 5V, AV = 10
PSRR vs DC Output Voltage VDD = 3V, AV = 2
PSRR vs DC Output Voltage VDD = 3V, AV = 4
PSRR vs DC Output Voltage VDD = 3V, AV = 10
Typical Performance Characteristics
PSRR Distribution VDD = 5V 217Hz, 200mvp-p, -30, +25, and +80C
(Continued) PSRR Distribution VDD = 3V 217Hz, 200mvp-p, -30, +25, and +80C
VDD
Power Supply Rejection Ration vs Bypass Capacitor Size = 5V, Input Grounded = 10, Output Load = 8
VDD
Power Supply Rejection Ration vs Bypass Capacitor Size = 3V, Input Grounded = 10, Output Load = 8
Top Trace = No Cap, Next Trace Down = 1f Next Trace Down = 2f, Bottom Trace = 4.7f HWD2190 vs HWD2177 Power Supply Rejection Ratio VDD = 5V, Input Grounded = 10 Output Load = 8, 200mV Ripple
Top Trace = No Cap, Next Trace Down = 1f Next Trace Down = 2f, Bottom Trace = 4.7f HWD2190 vs HWD2177 Power Supply Rejection Ratio VDD = 3V, Input Grounded = 10 Output Load = 8, 200mV Ripple
HWD2190 = Bottom Trace HWD2177 = Top Trace
HWD2190 = Bottom Trace HWD2177 = Top Trace
Typical Performance Characteristics
Power Derating Curves (PDMAX = 670mW)
(Continued) Power Derating - 8 bump SMD (PDMAX = 670mW)
Ambient Temperature in Degrees C Note: (PDMAX = 670mW for 5V, 8) Power Derating - 9 bump SMD (PDMAX = 670mW)
Ambient Temperature in Degrees C Note: (PDMAX = 670mW for 5V, 8) Power Derating - 10 Pin LD Pkg (PDMAX = 670mW)
Ambient Temperature in Degrees C Note: (PDMAX = 670mW for 5V, 8) Power Output vs Supply Voltage
Ambient Temperature in Degrees C Note: (PDMAX = 670mW for 5V, 8) Power Output vs Temperature
Typical Performance Characteristics
Power Dissipation vs Output Power VDD = 5V, 1kHz, 8, THD 1.0%
(Continued) Power Dissipation vs Output Power VDD = 3.3V, 1kHz, 8, THD 1.0%
Power Dissipation vs Output Power VDD = 2.6V, 1kHz
Output Power vs Load Resistance
Supply Current vs Ambient Temperature
Clipping (Dropout) Voltage vs Supply Voltage
Typical Performance Characteristics
Max Die Temp at PDMAX (9 bump microSMD)
(Continued) Max Die Temp at PDMAX (8 bump microSMD)
Output Offset Voltage
Supply Current vs Shutdown Voltage
Shutdown Hysterisis Voltage VDD = 5V
Shutdown Hysterisis Voltage VDD = 3V
Typical Performance Characteristics
Open Loop Frequency Response VDD = 5V, No Load
(Continued) Open Loop Frequency Response VDD = 3V, No Load
Gain / Phase Response, AV = 2 VDD = 5V, 8 Load, CLOAD = 500pF
Gain / Phase Response, AV = 4 VDD = 5V, 8 Load, CLOAD = 500pF
Phase Margin vs CLOAD, AV = 2 VDD = 5V, 8 Load Capacitance to gnd on each output
Phase Margin vs CLOAD, AV = 4 VDD = 5V, 8 Load Capacitance to gnd on each output
Typical Performance Characteristics
(Continued)
Phase Margin and Limits vs Application Variables, RIN = 22K
Wake Up Time (TWU)
Frequency Response vs Input Capacitor Size
Noise Floor
20019254
20019256
Application Information
BRIDGED CONFIGURATION EXPLANATION As shown in Figure 1, the HWD2190 has two operational amplifiers internally, allowing for a few different amplifier configurations. The first amplifier's gain is externally configurable, while the second amplifier is internally fixed in a unity-gain, inverting configuration. The closed-loop gain of the first amplifier is set by selecting the ratio of Rf to RIN while the second amplifier's gain is fixed by the two internal 20k resistors. Figure 1 shows that the output of amplifier one serves as the input to amplifier two which results in both amplifiers producing signals identical in magnitude, but out of phase by 180. Consequently, the differential gain for the IC is AVD= 2 *(Rf/RIN) By driving the load differentially through outputs Vo1 and Vo2, an amplifier configuration commonly referred to as "bridged mode" is established. Bridged mode operation is different from the classical single-ended amplifier configuration where one side of the load is connected to ground. A bridge amplifier design has a few distinct advantages over the single-ended configuration, as it provides differential drive to the load, thus doubling output swing for a specified supply voltage. Four times the output power is possible as compared to a single-ended amplifier under the same conditions. This increase in attainable output power assumes that the amplifier is not current limited or clipped. In order to choose an amplifier's closed-loop gain without causing excessive clipping, please refer to the Audio Power Amplifier Design section. A bridge configuration, such as the one used in the HWD2190, also creates a second advantage over single-ended amplifiers. Since the differential outputs, Vo1 and Vo2, are biased at half-supply, no net DC voltage exists across the load. This eliminates the need for an output coupling capacitor which is required in a single supply, single-ended amplifier configuration. Without an output coupling capacitor, the half-supply bias across the load would result in both increased internal IC power dissipation and also possible loudspeaker damage. EXPOSED-DAP PACKAGE PCB MOUNTING CONSIDERATIONS FOR THE HWD2190LD The HWD2190LD's exposed-DAP (die attach paddle) package (LD) provides a low thermal resistance between the die and the PCB to which the part is mounted and soldered. The HWD2190LD package should have its DAP soldered to the grounded copper pad (heatsink) under the HWD2190LD (the NC pins, no connect, and ground pins should also be directly connected to this copper pad-heatsink area). The area of the copper pad (heatsink) can be determined from the LD Power Derating graph. If the multiple layer copper heatsink areas are used, then these inner layer or backside copper heatsink areas should be connected to each other with 4 (2 x 2) vias. The diameter for these vias should be between 0.013 inches and 0.02 inches with a 0.050inch pitch-spacing. Ensure efficient thermal conductivity by plating through and solderfilling the vias.
POWER DISSIPATION Power dissipation is a major concern when designing a successful amplifier, whether the amplifier is bridged or single-ended. A direct consequence of the increased power delivered to the load by a bridge amplifier is an increase in internal power dissipation. Since the HWD2190 has two operational amplifiers in one package, the maximum internal power dissipation is 4 times that of a single-ended amplifier. The maximum power dissipation for a given application can be derived from the power dissipation graphs or from Equation 1. (1) PDMAX = 4*(VDD)2/(22RL) It is critical that the maximum junction temperature TJMAX of 150C is not exceeded. TJMAX can be determined from the power derating curves by using PDMAX and the PC board foil area. By adding additional copper foil, the thermal resistance of the application can be reduced, resulting in higher PDMAX. Additional copper foil can be added to any of the leads connected to the HWD2190. Refer to the APPLICATION INFORMATION on the HWD2190 reference design board for an example of good heat sinking. If TJMAX still exceeds 150C, then additional changes must be made. These changes can include reduced supply voltage, higher load impedance, or reduced ambient temperature. Internal power dissipation is a function of output power. Refer to the Typical Performance Characteristics curves for power dissipation information for different output powers and output loading. POWER SUPPLY BYPASSING As with any amplifier, proper supply bypassing is critical for low noise performance and high power supply rejection. The capacitor location on both the bypass and power supply pins should be as close to the device as possible. Typical applications employ a 5V regulator with 10 F tantalum or electrolytic capacitor and a ceramic bypass capacitor which aid in supply stability. This does not eliminate the need for bypassing the supply nodes of the HWD2190. The selection of a bypass capacitor, especially CBYPASS, is dependent upon PSRR requirements, click and pop performance (as explained in the section, Proper Selection of External Components), system cost, and size constraints. SHUTDOWN FUNCTION In order to reduce power consumption while not in use, the HWD2190 contains a shutdown pin to externally turn off the amplifier's bias circuitry. This shutdown feature turns the amplifier off when a logic low is placed on the shutdown pin. By switching the shutdown pin to ground, the HWD2190 supply current draw will be minimized in idle mode. While the device will be disabled with shutdown pin voltages less than 0.5VDC, the idle current may be greater than the typical value of 0.1A. (Idle current is measured with the shutdown pin grounded). In many applications, a microcontroller or microprocessor output is used to control the shutdown circuitry to provide a quick, smooth transition into shutdown. Another solution is to use a single-pole, single-throw switch in conjunction with an external pull-up resistor. When the switch is closed, the shutdown pin is connected to ground and disables the amplifier. If the switch is open, then the external pull-up resistor will enable the HWD2190. This scheme guarantees that the shutdown pin will not float thus preventing unwanted state changes.
Application Information
SHUTDOWN OUTPUT IMPEDANCE For Rf = 20k ohms:
(Continued)
ZOUT1 (between Out1 and GND) = 10k||50k||Rf = 6k ZOUT2 (between Out2 and GND) = 10k||(40k+(10k||Rf)) = 8.3k ZOUT1-2 (between Out1 and Out2) = 40k||(10k+(10k||Rf)) = 11.7k The -3dB roll off for these measurements is 600kHz PROPER SELECTION OF EXTERNAL COMPONENTS Proper selection of external components in applications using integrated power amplifiers is critical to optimize device and system performance. While the HWD2190 is tolerant of external component combinations, consideration to component values must be used to maximize overall system quality. The HWD2190 is unity-gain stable which gives the designer maximum system flexibility. The HWD2190 should be used in low gain configurations to minimize THD+N values, and maximize the signal to noise ratio. Low gain configurations require large input signals to obtain a given output power. Input signals equal to or greater than 1Vrms are available from sources such as audio codecs. Please refer to the section, Audio Power Amplifier Design, for a more complete explanation of proper gain selection. Besides gain, one of the major considerations is the closedloop bandwidth of the amplifier. To a large extent, the bandwidth is dictated by the choice of external components shown in Figure 1. The input coupling capacitor, CIN, forms a first order high pass filter which limits low frequency response. This value should be chosen based on needed frequency response for a few distinct reasons. Selection Of Input Capacitor Size Large input capacitors are both expensive and space hungry for portable designs. Clearly, a certain sized capacitor is needed to couple in low frequencies without severe attenuation. But in many cases the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to 150Hz. Thus, using a large input capacitor may not increase actual system performance. In addition to system cost and size, click and pop performance is effected by the size of the input coupling capacitor, CIN. A larger input coupling capacitor requires more charge to reach its quiescent DC voltage (nominally 1/2 VDD). This charge comes from the output via the feedback and is apt to create pops upon device enable. Thus, by minimizing the capacitor size based on necessary low frequency response, turn-on pops can be minimized. Besides minimizing the input capacitor size, careful consideration should be paid to the bypass capacitor value. Bypass capacitor, CBYPASS, is the most critical component to minimize turn-on pops since it determines how fast the HWD2190 turns on. The slower the HWD2190's outputs ramp to their quiescent DC voltage (nominally 1/2VDD), the smaller the turn-on pop. Choosing CBYPASS equal to 1.0F along with a small value of CIN, (in the range of 0.1F to 0.39F), should
produce a virtually clickless and popless shutdown function. While the device will function properly, (no oscillations or motorboating), with CBYPASS equal to 0.1F, the device will be much more susceptible to turn-on clicks and pops. Thus, a value of CBYPASS equal to 1.0F is recommended in all but the most cost sensitive designs. AUDIO POWER AMPLIFIER DESIGN A 1W/8 AUDIO AMPLIFIER Given: Power Output Load Impedance Input Level Input Impedance Bandwidth 1 Wrms 8 1 Vrms 20 k 100 Hz-20 kHz 0.25 dB
A designer must first determine the minimum supply rail to obtain the specified output power. By extrapolating from the Output Power vs Supply Voltage graphs in the Typical Performance Characteristics section, the supply rail can be easily found. A second way to determine the minimum supply rail is to calculate the required Vopeak using Equation 2 and add the output voltage. Using this method, the minimum supply voltage would be (Vopeak + (VODTOP + VODBOT)), where VODBOT and VODTOP are extrapolated from the Dropout Voltage vs Supply Voltage curve in the Typical Performance Characteristics section.
(2) 5V is a standard voltage which in most applications is chosen for the supply rail. Extra supply voltage creates headroom that allows the HWD2190 to reproduce peaks in excess of 1W without producing audible distortion. At this time, the designer must make sure that the power supply choice along with the output impedance does not violate the conditions explained in the Power Dissipation section. Once the power dissipation equations have been addressed, the required differential gain can be determined from Equation 3.
(3) Rf/RIN = AVD/2 From Equation 3, the minimum AVD is 2.83; use AVD = 3. Since the desired input impedance is 20 k, and with an AVD gain of 3, a ratio of 1.5:1 of Rf to RIN results in an allocation of RIN = 20 k and Rf = 30 k. The final design step is to address the bandwidth requirements which must be stated as a pair of -3 dB frequency points. Five times away from a -3 dB point is 0.17 dB down from passband response which is better than the required 0.25 dB specified. fL = 100Hz/5 = 20Hz fH = 20kHz * 5 = 100kHz
Application Information
(Continued)
As stated in the External Components section, RIN in conjunction with CIN create a highpass filter. CIN 1/(2*20 k*20Hz) = 0.397F; use 0.39F The high frequency pole is determined by the product of the desired frequency pole, fH, and the differential gain, AVD.
With a AVD = 3 and fH = 100kHz, the resulting GBWP = 300kHz which is much smaller than the HWD2190 GBWP of 2.5MHz. This calculation shows that if a designer has a need to design an amplifier with a higher differential gain, the HWD2190 can still be used without running into bandwidth limitations.
HIGHER GAIN AUDIO AMPLIFIER
FIGURE 2. The HWD2190 is unity-gain stable and requires no external components besides gain-setting resistors, an input coupling capacitor, and proper supply bypassing in the typical application. However, if a closed-loop differential gain of greater than 10 is required, a feedback capacitor (C4) may be needed as shown in Figure 2 to bandwidth limit the amplifier. This feedback capacitor creates a low pass filter that eliminates possible high frequency oscillations. Care should be taken when calculating the -3dB frequency in that an incorrect combination of R3 and C4 will cause rolloff before 20kHz. A typical combination of feedback resistor and capacitor that will not produce audio band high frequency rolloff is R3 = 20k and C4 = 25pf. These components result in a -3dB point of approximately 320 kHz.
Application Information
(Continued)
DIFFERENTIAL AMPLIFIER CONFIGURATION FOR HWD2190
FIGURE 3. REFERENCE DESIGN BOARD and LAYOUT - micro SMD
FIGURE 4.
Application Information
Silk Screen
(Continued)
HWD2190 micro SMD BOARD ARTWORK Top Layer
Bottom Layer
Inner Layer VDD
Inner Layer Ground
Application Information
(Continued)
REFERENCE DESIGN BOARD and PCB LAYOUT GUIDELINES - MSOP & SO Boards
FIGURE 5.
Application Information
Silk Screen
(Continued)
HWD2190 SO DEMO BOARD ARTWORK Top Layer
Top Layer
Bottom Layer
Bottom Layer
HWD2190 MSOP DEMO BOARD ARTWORK Silk Screen
Application Information
(Continued) Mono HWD2190 Reference Design Boards Bill of Material for all 3 Demo Boards
Item 1 10 20 21 25 30 35
Part Number
Part Description
Qty 1 1 1 1 3
Ref Designator U1 C1 C2 C3 R1, R2, R3 J1, J2
551011208-001 HWD2190 Mono Reference Design Board 1 212911183-001 HWD2190 Audio AMP 151911207-001 Tant Cap 1uF 16V 10 151911207-002 Cer Cap 0.39uF 50V Z5U 20% 1210 152911207-001 Tant Cap 1uF 16V 10 472911207-001 Res 20K Ohm 1/10W 5
210007039-002 Jumper Header Vertical Mount 2X1 0.100 2
PCB LAYOUT GUIDELINES This section provides practical guidelines for mixed signal PCB layout that involves various digital/analog power and ground traces. Designers should note that these are only "rule-of-thumb" recommendations and the actual results will depend heavily on the final layout. GENERAL MIXED SIGNAL LAYOUT RECOMMENDATIONS Power and Ground Circuits For 2 layer mixed signal design, it is important to isolate the digital power and ground trace paths from the analog power and ground trace paths. Star trace routing techniques (bringing individual traces back to a central point rather than daisy chaining traces together in a serial manner) can have a major impact on low level signal performance. Star trace routing refers to using individual traces to feed power and ground to each circuit or even device. This technique will require a greater amount of design time but will not increase the final price of the board. The only extra parts required will be some jumpers.
Single-Point Power / Ground Connections The analog power traces should be connected to the digital traces through a single point (link). A "Pi-filter" can be helpful in minimizing High Frequency noise coupling between the analog and digital sections. It is further recommended to put digital and analog power traces over the corresponding digital and analog ground traces to minimize noise coupling. Placement of Digital and Analog Components All digital components and high-speed digital signals traces should be located as far away as possible from analog components and circuit traces. Avoiding Typical Design / Layout Problems Avoid ground loops or running digital and analog traces parallel to each other (side-by-side) on the same PCB layer. When traces must cross over each other do it at 90 degrees. Running digital and analog traces at 90 degrees to each other from the top to the bottom side as much as possible will minimize capacitive noise coupling and cross talk.
Physical Dimensions
inches (millimeters) unless otherwise noted
Note: Unless otherwise specified. 1. Epoxy coating. 2. 63Sn/37Pb eutectic bump. 3. Recommend non-solder mask defined landing pad. 4. Pin 1 is established by lower left corner with respect to text orientation pins are numbered counterclockwise. 5. Reference JEDEC registration MO-211, variation BC.
8-Bump micro SMD Order Number HWD2190IBP, HWD2190IBPX X1 = 1.3610.03 X2 = 1.3610.03 X3 = 0.8500.10
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
9-Bump micro SMD Order Number HWD2190IBL, HWD2190IBLX X1 = 1.5140.03 X2 = 1.5140.03 X3 = 0.9450.10
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
MSOP Order Number HWD2190MM
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
SO Order Number HWD2190M
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
LLP Order Number HWD2190LD
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
9-Bump micro SMD Order Number HWD2190ITL, HWD2190ITLX X1 = 1.5140.03 X2 = 1.5140.03 X3 = 0.6000.075
Chengdu Sino Microelectronics System Co.,Ltd
(Http://www.csmsc.com)
Headquarters of CSMSC:
Address: 2nd floor, Building D, Science & Technology Industrial Park, 11 Gaopeng Avenue, Chengdu High-Tech Zone,Chengdu City, Sichuan Province, P.R.China PC: 610041 Tel: +86-28-8517-7737 Fax: +86-28-8517-5097
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Address: Room 1015, Building B, Zhongshen Garden, Caitian Rd, Futian District, Shenzhen, P.R.China PC: 518000 Tel : +86-775-8299-5149 +86-775-8299-5147 +86-775-8299-6144 Fax: +86-775-8299-6142

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