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| Preliminary HAT3008R, HAT3008RJ Silicon N / P Channel Power MOS FET High Speed Power Switching Features * * * * For Automotive Application (at Type Code "J") Low on-resistance Capable of 4 V gate drive High density mounting REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 78 DD 56 DD 65 87 12 34 2 G 4 G 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain S1 Nch S3 Pch Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 4 Note 1 Value Nch 60 20 5 40 5 -- 5 -- 2.14 2 3 150 -55 to +150 Pch -60 20 -3.5 -28 -3.5 -- -3.5 -- 1.05 2 3 150 -55 to +150 Unit V V A A A -- A -- mJ W W C C EAR Note 4 Pch Pch Note 3 Tch Tstg Note 2 PW 10 s, duty cycle 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s Value at Tch = 25C, Rg 50 REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 1 of 11 HAT3008R, HAT3008RJ Preliminary Electrical Characteristics N Channel (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current HAT3008R Zero gate voltage drain current HAT3008RJ Zero gate voltage drain current HAT3008R HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 60 20 -- -- -- -- -- 1.2 -- -- 6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 0.043 0.056 9 520 270 100 11 40 110 80 0.84 40 Max -- -- 10 1 0.1 -- 10 2.2 0.058 0.084 -- -- -- -- -- -- -- -- 1.1 -- Unit V V A A A A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0 Ta = 125C VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 V Note 5 ID = 3 A, VGS = 4 V Note 5 ID = 3 A, VDS = 10 V Note 5 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 3 A VDD 30 V IF = 5 A, VGS = 0 Note 5 IF = 5 A, VGS = 0 diF/dt = 50 A/s REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 2 of 11 HAT3008R, HAT3008RJ P Channel Preliminary (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current HAT3008R Zero gate voltage drain current HAT3008RJ Zero gate voltage drain current HAT3008R HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 6. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min -60 20 -- -- -- -- -- -1.2 -- -- 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 0.12 0.16 4.5 600 290 75 11 30 100 55 -0.98 70 Max -- -- 10 -1 -0.1 -- -10 -2.2 0.15 0.23 -- -- -- -- -- -- -- -- -1.28 -- Unit V V A A A A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -60 V, VGS = 0 VDS = -48 V, VGS = 0 Ta = 125C VDS = -10 V, ID = -1 mA ID = -2 A, VGS = -10 V Note 6 ID = -2 A, VGS = -4 V Note 6 ID = -2 A, VDS = -10 V Note 6 VDS = -10 V VGS = 0 f = 1 MHz VGS = -10 V, ID = -2 A VDD -30 V IF = -3.5 A, VGS = 0 Note 6 IF = -3.5 A, VGS = 0 diF/dt = 50 A/s REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 3 of 11 HAT3008R, HAT3008RJ Preliminary Main Characteristics N Channel Power vs. Temperature Derating 4.0 100 Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 30 Maximum Safe Operation Area 10 s Pch (W) ID (A) 10 DC 3.0 10 3 1 0.3 0.1 0.03 Channel Dissipation 2.0 1 Dr ive 1.0 Op er at ion Drain Current s =1 0m Op s( er 1s at ho ion t) (P Operation in W No 1 t this area is 0 e7 s) limited by RDS (on) Ta = 25C 1 shot Pulse 0.3 1 3 10 30 100 PW 1m 0 s 2 Dr ive er Op at ion 0 0 50 100 150 200 0.01 0.1 Ambient Temperature Ta (C) Drain to Source Voltage VDS (V) Note 7: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics 10 10 V 4V 3.5 V Pulse Test 10 Typical Transfer Characteristics VDS = 10 V Pulse Test (A) (A) ID Drain Current 8 3V 8 ID 6 6 Drain Current 4 2.5 V 2 VGS = 2 V 0 0 2 4 6 8 10 4 25C Tc = 75C 2 -25C 0 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current VDS (on) (V) Pulse Test 0.4 Drain to Source on State Resistance RDS (on) () 0.5 1.0 Pulse Test 0.5 Drain to Source Voltage 0.3 ID = 5 A 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.2 0.1 2A 1A 0 0 4 8 12 16 20 0.3 1 3 10 30 100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 4 of 11 HAT3008R, HAT3008RJ Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 50 Static Drain to Source on State Resistance RDS (on) () 20 10 5 25C 2 1 0.5 0.1 75C VDS = 10 V Pulse Test 0.2 0.5 1 2 5 10 Tc = -25C 0.12 ID = 5 A 0.08 VGS = 4 V 1 A, 2 A 0.04 10 V 0 -40 0 40 1 A, 2 A, 5 A 80 120 160 Case Temperature Tc (C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 2000 1000 Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 200 100 50 500 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 Ciss Coss 20 10 5 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.2 0.5 1 2 5 10 Crss 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) ID = 5 A 16 VGS 60 VDS VDD = 10 V 25 V 50 V Switching Characteristics VGS (V) 20 1000 300 td(off) 100 30 10 3 1 0.1 tf tr td(on) 100 80 Drain to Source Voltage 12 40 8 20 0 0 8 VDD = 50 V 25 V 10 V 16 24 32 40 4 Gate to Source Voltage Switching Time t (ns) VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 % 0.2 0.5 1 2 5 10 0 Gate Charge Qg (nc) Drain Current ID (A) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 5 of 11 HAT3008R, HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage 10 Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 2.5 IAP = 5 A VDD = 25 V L = 100 H duty < 0.1 % Rg 50 Reverse Drain Current IDR (A) 8 10 V 6 5V VGS = 0, -5 V 2.0 1.5 4 1.0 2 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 0.5 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (C) Avalanche Test Circuit Avalanche Waveform 1 * L * IAP2 * 2 VDSS VDSS - VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor EAR = Rg D.U.T Vin 15 V 50 VDD 0 Switching Time Test Circuit Switching Time Waveform Vin Monitor D.U.T. RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 10 V 50 VDD = 30 V td(on) 90% tr 90% td(off) tf REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 6 of 11 HAT3008R, HAT3008RJ P Channel Power vs. Temperature Derating 4.0 Preliminary Maximum Safe Operation Area -100 -30 10 s Pch (W) ID (A) Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3.0 -10 -3 -1 -0.3 -0.1 DC PW Channel Dissipation 2.0 1 Dr 1.0 ive Op er at ion Drain Current = 10 Op ms era tio n( Operation in PW N o 1 te 8 this area is 0s limited by RDS (on) ) 0 s 1m s 10 2 Dr ive Op er at ion 0 0 50 100 150 200 -0.03 Ta = 25C 1 shot pulse -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Ambient Temperature Ta (C) Drain to Source Voltage VDS (V) Note 8: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics -10 -10 V -5 V -4 V -10 -3.5 V Pulse Test -6 Typical Transfer Characteristics ID (A) ID (A) -8 -8 VDS = 10 V Pulse Test -6 -3 V Drain Current -4 Drain Current -4 Tc = 75C -2 25C -25C -2 VGS = -2.5 V 0 0 -2 -4 -6 -8 -10 0 0 -1 -2 -3 -4 -5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) -0.5 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 VGS = -4 V -10 V -0.4 -0.3 ID = -2 A -0.2 -1 A -0.1 -0.5 A 0.2 0.1 0.05 0.02 0.01 -0.1 -0.3 0 0 -4 -8 -12 -16 -20 -1 -3 -10 -30 -100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 7 of 11 HAT3008R, HAT3008RJ Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 0.5 Pulse Test 0.4 ID = -2 A 0.3 -0.5 A 0.2 VGS = -4 V -2 A 0.1 -10 V 0 -40 0 40 80 120 160 -0.5 A, -1 A -1 A 20 10 Tc = -25C 5 25C 2 1 0.5 75C Preliminary Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () VDS = 10 V Pulse Test 0.2 -0.1 -0.2 -0.5 -1 -2 -5 -10 Case Temperature Tc (C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 2000 1000 VGS = 0 f = 1 MHz Ciss 500 200 100 50 20 10 0 -10 -20 -30 -40 -50 Crss Coss Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 100 50 20 10 5 -0.1 -0.2 di / dt = 50 A / s VGS = 0, Ta = 25C -0.5 -1 -2 -5 -10 Capacitance C (pF) 200 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) VDD = -10 V -25 V -50 V ID = -3.5 A -4 Switching Characteristics VGS (V) 0 1000 300 td(off) 100 tf 30 tr 10 3 V = -10 V, V = -30 V GS DD PW = 5 s, duty 1 % 1 -0.1 -0.2 -0.5 -1 -2 td(on) 0 -20 Drain to Source Voltage -40 VDS -60 VDD = -50 V -25 V -10 V VGS -8 -12 -80 -16 -100 0 8 16 24 32 -20 40 Gate to Source Voltage Switching Time t (ns) -5 -10 Gate Charge Qg (nc) Drain Current ID (A) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 8 of 11 HAT3008R, HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage -10 Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 2.5 IAP = -3.5 A VDD = -25 V L = 100 H duty < 0.1 % Rg 50 Reverse Drain Current IDR (A) -8 2.0 -6 10 V VGS = 0, 5 V 5V 1.5 -4 1.0 -2 Pulse Test 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0.5 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (C) Avalanche Test Circuit Avalanche Waveform 1 * L * IAP2 * 2 VDSS VDSS - VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor EAR = Rg D.U.T Vin -15 V 50 VDD 0 Switching Time Test Circuit Vin Vin Monitor D.U.T. RL Vout Monitor Switching Time Waveform 10% 90% 90% 90% Vin -10 V 50 VDD = -30 V Vout td(on) 10% tr td(off) 10% tf REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 9 of 11 HAT3008R, HAT3008RJ Common Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance s (t) 10 Preliminary 1 D=1 0.5 0.1 0.2 0.1 0.05 ch - f (t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) lse 0.01 0.02 0.01 PDM PW T 1m 10 m 100 m 1 10 100 D= 0.001 h 1s PW T ot pu 0.0001 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance s (t) 10 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 ch - f (t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) e uls 0.01 PDM PW T 1m 10 m 100 m 1 10 100 D= 0.001 1s ho PW T tp 0.0001 10 100 1000 10000 Pulse Width PW (S) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 10 of 11 HAT3008R, HAT3008RJ Preliminary Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol Dimension in Millimeters Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT3008R-EL-E HAT3008RJ-EL-E Quantity 2500 pcs 2500 pcs Taping Taping Shipping Container REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 11 of 11 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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