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| 40 10V 2.5V 4.5V 2V 20 16 12 8 125C Vds=5V 30 Id (A) 20 10 Vgs=1.5V 0 0 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 1 5 Id(A) 4 0 0 25C 1.5 2 Vgs(Volts) Figure 2: Transfer Characteristics 0.5 1 2.5 40 Vgs=1.8V 1.6 Vgs=2.5V,6A Rds(on) (m:) 30 Normalized On-Resistance Vgs=2.5V Vgs=4.5V 1.4 Vgs=4.5V, 8A 20 1.2 Vgs=10V, 8.8A 1 Vgs=1.8V, 4A 10 Vgs=10V 0 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 40 30 Id=6A 1.0E-01 125C Rds(on) (m:) 125C 20 25C 10 Is (A) 1.0E-02 1.0E-03 1.0E-04 25C 0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 2800 Vds=10V Id=8.8A 2400 4 Capacitance (pF) 2000 Ciss 1600 1200 800 400 0 Coss Crss Vgs (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 40 10Ps 10.0 Rds(on) limited 100Ps 10ms 0.1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 10 100 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1s 10s DC 1ms 30 0 10 15 Vds (Volts) Figure 8: Capacitance Characteristics 5 20 Tj(max)=150C Ta=25C Id (Amps) Power (W) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pd Ton T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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