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Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 DL5711 DL6263 Features * * For general purpose applications These diodes are also available in the DO-35 case with type designation 1N5711 and 1N6263, in the Micro-MELF case with type designation MCL5711 and MCL6263. Small Signal Schottky Diodes MINIMELF Maximum Ratings Repetitive Peak Reverse Voltage VR DL5711 70V DL6263 60V tp<10uS, Maximum Forward IFSM 2.0A TA=25OC Surge Current Power Dissipation PTOT 400mW* Junction Temperature TJ 125OC Storage Temperature TSTG -55~+150OC Range * Valid provided that electrodes are kept at ambient temperature Cathode Mark C B A Electrical Characteristics @ 25C Unless Otherwise Specified Maximum Forward Voltage VF Minimum Reverse Breakdown voltage DL5711 DL6263 Maximum Leakage current Maximum Junction Capacitance Maximum Reverse recovery time Maximum Thermal resistance junction to Ambient Air VR IR CJ trr 0.41V 1.0V IF = 1.0mA IF = 15mA DIMENSION DIM A B C INCHES MIN .134 .008 .055 MAX .142 .016 .059 MIN 3.40 0.20 1.40 MM MAX 3.60 0.40 1.50 NOTE 70V 60V 200nA 2.0pF 1.0ns VR=50V VR=0, f=1MHz IF=5.0mA , IR=5.0mA , SUGGESTED SOLDER PAD LAYOUT 0.105 0.075" RJA 0.3K/ W 0.030" www.cnelectr .com DL5711,DL6263 Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier mA Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA IF IF VF Fig.3 Typical variation of reverse current at various temperatures mA VF Fig.4 Typical capacitance curve as a function of reverse voltage PF TJ=25 C IR CJ VR VR www.cnelectr .com |
Price & Availability of DL6263
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