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 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
DL5711 DL6263
Features
* * For general purpose applications These diodes are also available in the DO-35 case with type designation 1N5711 and 1N6263, in the Micro-MELF case with type designation MCL5711 and MCL6263.
Small Signal Schottky Diodes
MINIMELF
Maximum Ratings
Repetitive Peak Reverse Voltage VR DL5711 70V DL6263 60V tp<10uS, Maximum Forward IFSM 2.0A TA=25OC Surge Current Power Dissipation PTOT 400mW* Junction Temperature TJ 125OC Storage Temperature TSTG -55~+150OC Range * Valid provided that electrodes are kept at ambient temperature
Cathode Mark
C
B A
Electrical Characteristics @ 25C Unless Otherwise Specified
Maximum Forward Voltage VF Minimum Reverse Breakdown voltage DL5711 DL6263 Maximum Leakage current Maximum Junction Capacitance Maximum Reverse recovery time Maximum Thermal resistance junction to Ambient Air VR IR CJ trr 0.41V 1.0V IF = 1.0mA IF = 15mA
DIMENSION DIM A B C INCHES MIN .134 .008 .055 MAX .142 .016 .059 MIN 3.40 0.20 1.40 MM MAX 3.60 0.40 1.50 NOTE
70V 60V 200nA 2.0pF 1.0ns
VR=50V VR=0, f=1MHz IF=5.0mA , IR=5.0mA ,
SUGGESTED SOLDER PAD LAYOUT
0.105
0.075"
RJA
0.3K/ W
0.030"
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DL5711,DL6263
Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier
mA
Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring
mA

IF
IF


VF Fig.3 Typical variation of reverse current at various temperatures
mA


VF Fig.4 Typical capacitance curve as a function of reverse voltage
PF
TJ=25 C
IR

CJ




VR
VR

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