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  Datasheet File OCR Text:
 CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT NPN SILICON Transistor
VOLTAGE 60 Volts
APPLICATION
* Telephony and proferssional communction equipment. * Other switching applications.
CHT3055ZPT
CURRENT 6 Ampere
FEATURE
* Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability.
6.50+0.20 3.00+0.10
SC-73/SOT-223
1.65+0.15 0.90+0.05 2.0+0.3
CONSTRUCTION
*NPN SILICON Transistor
0.70+0.10
3.5+0.2
7.0+0.3
0.9+0.2
2.0+0.3
MARKING
* ZDN
0.70+0.10 2.30+0.1
0.70+0.10 4.60+0.1
0.27+0.05 0.01~0.10
1 1 Base
3
2
CIRCUIT
(1) B
C (3)
2 Emitter 3 Collector ( Heat Sink )
E(2)
Dimensions in millimeters
SC-73/SOT-223
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board.
2004-7
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Base Current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector - - - - - Tamb 25 C; note 1 -
MIN.
MAX. 100 60 7.0 6.0 3.0 2 +150 150 +150 V V
UNIT
V A A W C C C
-65 - -65
RATING CHARACTERISTIC CURVES ( CHT3055ZPT )
CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICEO IEBO hFE PARAMETER collector cut-off current emitter cut-off current VCE=30 V VEB=7.0V CONDITIONS - - 20 5.0 MIN. MAX. 700 5.0 70 - UNIT uA mA
DC current gain
IC = 4.0A; VCE = 4V IC =6.0A; VCE = 4V
VCEsat
collector-emitter saturation voltage base-emitter saturation voltage transition frequency
IC=4.0A,IB=400mA
-
1.1
V
VBEON fT
IC = 4.0A; VCE = 4V IC = 500mA; VCE = 1 0 V; f = 1.0MHz
- 2.5
1.5 -
V MHz


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