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| APTGT600U120D4G Single switch Trench + Field Stop IGBT Power Module 1 VCES = 1200V IC = 600A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration 3 5 2 Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 900 600 1200 20 2500 1200A@1050V Unit V APTGT600U120D4G - Rev 2 July, 2008 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT600U120D4G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 600A Tj = 125C VGE = VCE , IC = 24mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 5 2.1 6.5 400 Unit mA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=600A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 600A RG = 1.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 600A RG = 1.2 VGE = 15V Tj = 125C VBus = 600V IC = 600A Tj = 125C RG = 1.2 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 43 2.25 2 5.6 280 90 550 130 300 100 650 180 50 mJ 88 2400 A Max Unit nF C ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 600A VR = 600V IF = 600A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 750 1000 600 1.6 1.6 250 350 60 115 28 52 2.1 Unit V A A V ns C mJ APTGT600U120D4G - Rev 2 July, 2008 di/dt =7000A/s www.microsemi.com 2-5 APTGT600U120D4G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.05 0.075 150 125 125 5 2 350 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g D4 Package outline (dimensions in mm) www.microsemi.com 3-5 APTGT600U120D4G - Rev 2 July, 2008 APTGT600U120D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 1200 1000 TJ=125C 1200 1000 IC (A) TJ=25C TJ = 125C VGE=17V VGE=13V VGE=15V VGE=9V 800 600 400 200 0 0 1 2 VCE (V) Transfert Characteristics IC (A) 800 600 400 200 0 3 4 0 1 2 VCE (V) 3 4 Energy losses vs Collector Current 180 160 VCE = 600V VGE = 15V RG = 1.2 TJ = 125C Eoff Eon 1200 1000 800 IC (A) 600 400 TJ=25C TJ=125C 140 120 E (mJ) 100 80 60 40 20 0 Er TJ=125C 200 0 5 6 7 8 9 VGE (V) 10 11 12 Eon 0 200 400 600 IC (A) 800 1000 1200 Switching Energy Losses vs Gate Resistance 250 200 E (mJ) 150 Eoff Eoff 1400 VCE = 600V VGE =15V IC = 600A TJ = 125C Eon Reverse Bias Safe Operating Area 1200 1000 IC (A) 800 600 400 VGE=15V TJ=125C RG=1.2 100 50 0 0 2 4 6 8 Gate Resistance (ohms) 10 Er 200 0 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 Thermal Impedance (C/W) 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 IGBT 0.05 0 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT600U120D4G - Rev 2 July, 2008 APTGT600U120D4G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 50 40 30 20 10 ZVS ZCS VCE=600V D=50% RG=1.2 TJ=125C TC=75C Forward Characteristic of diode 1200 1000 800 IC (A) 600 400 TJ=25C 0 100 Hard switching 200 0 300 400 IC (A) 500 600 700 800 0 TJ=125C TJ=25C 200 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W) 0.9 0.06 0.7 0.5 0.3 0.02 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse Diode 0.04 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT600U120D4G - Rev 2 July, 2008 |
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