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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH313 DESCRIPTION *With TO-3PML package *High voltage *High speed switching APPLICATIONS *Horizontal deflection for color TV *Switch mode power supplies. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Total power dissipation Operating junction temperature Storage temperature tp<5ms TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1300 600 10 5 10 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=3A ;IB=0.75A IC=3A ;IB=0.75A VCE=1300V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V 10 5.5 MIN 600 10 TYP. BUH313 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 MAX UNIT V V 1.5 1.3 0.2 0.1 V V mA mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.8 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH313 Fig.2 Outline dimensions 3 |
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