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Ordering number : ENA1480 TIG062E8 SANYO Semiconductors DATA SHEET TIG062E8 Features * * * * * * * N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 ICP3 dVCE / dt Tch Tstg PW1ms CM=150F, VGE=3V CM=100F, VGE=3.3V CM=100F, VGE=4V VCE320V, starting Tch=25C Conditions Ratings 400 5 6 100 130 150 400 150 -40 to +150 Unit V V V A A A V / s C C Marking : ZC * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / s will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 61009PJ MS IM TC-00001992 No. A1480-1/5 TIG062E8 Electrical Characteristics at Ta=25C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)CES ICES IGES VGE(off) VCE(sat) Cies Coes Cres Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=6V, VCE=0V VCE=10V, IC=1mA IC=100A, VGE=3V VCE=10V, f=1MHz VCE=10V, f=1MHz VCE=10V, f=1MHz 0.4 5 2400 32 24 Ratings min 400 10 10 0.9 8 typ max Unit V A A V V pF pF pF Package Dimensions unit : mm (typ) 7011A-004 Electrical Connection 8 7 6 5 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 1 2 3 4 Top view 0.25 1 0.65 4 0.3 0.9 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector Bot t om View 0.07 SANYO : ECH8 Fig.1 Large Current R Load Switching Circuit RL CM RG + VCC TIG062E8 100k Note1. Gate Series Resistance RG 250 is recommended for protection purpose at the time of turn OFF. However, if dv / dt 400V / s is satisfied at customer's actual set evaluation, RG < 250 can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off. No. A1480-2/5 TIG062E8 150 IC -- VCE V =4 GE .0V 3.0V 150 IC -- VGE --2 5 C 2 VCE=10V Collector Current, IC -- A Collector Current, IC -- A 100 2.5V 100 75 75 1.8V 50 50 25 25 0 0 1 2 3 4 5 6 7 8 9 10 0 0 1 75 C 3 Tc = 25 C 4 125 125 5 IT14699 Collector-to-Emitter Voltage, VCE -- V 10 VCE -- VGE IT14698 10 Gate-to-Emitter Voltage, VGE -- V VCE -- VGE IC=100A Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V IC=150A 9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 IT14700 9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 IT14701 Tc=75C 25C --25C Tc=75C 25C --25C Gate-to-Emitter Voltage, VGE -- V 11 10 VCE(sat) -- Tc Gate-to-Emitter Voltage, VGE -- V Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 --50 VGE(off) -- Tc Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE=10V IC=1mA 9 8 7 6 5 4 3 2 --50 --25 0 =15 , IC =4V V GE 0A 00 I =1 =3V, C VGE A 25 50 75 100 125 150 --25 0 25 50 75 100 125 150 5 3 2 Cies, Coes, Cres -- VCE Cies Case Temperature, Tc -- C IT14702 Case Temperature, Tc -- C 5 3 SW Time -- ICP td(o ff) tf IT14703 f=1MHz Switching Time, SW Time -- ns Cies, Coes, Cres -- pF 1000 7 5 3 2 100 7 5 3 2 10 7 2 1000 7 5 3 2 Test circuit Fig.1 VGE=3V VCC=320V RG=250 CM=150F PW=50s tr Coes Cres 0 2 4 6 8 10 12 14 16 18 20 td(on) 100 7 10 2 3 5 7 100 2 3 5 IT14705 Collector-to-Emitter Voltage, VCE -- V IT14704 Collector Current (Pulse), ICP -- A No. A1480-3/5 TIG062E8 5 3 SW Time -- RG 800 700 dv / dt -- RG Test circuit Fig.1 VGE=3V VCC=320V ICP=100A PW=50s Switching Time, SW Time -- ns 2 Turn OFF, dv / dt -- V / s 1000 7 5 3 2 100 7 5 3 2 tf 600 500 400 300 200 100 0 0 ff) t d(o tr on t d( ) Test circuit Fig.1 VGE=3V VCC=320V ICP=100A CM=150F PW=50s 2 3 5 1000 IT14706 7 2 3 5 7 100 50 100 150 200 250 300 350 400 450 500 Gate Series Resistance, RG -- 160 ICP -- VGE Tc=25C Gate Series Resistance, RG -- 300 CM -- ICP1 IT14707 Collector Current (Pulse), ICP -- A 140 120 100 80 60 40 20 0 0 VCE=320V CM=100F Tc=70C Maximum Capacitor, CM -- F 250 Tc=25C 200 Tc=70C 150 100 50 1 2 3 4 5 6 IT14708 0 VGE=3V VCE=320V 0 20 40 60 80 100 120 140 160 Gate-to-Emitter Voltage, VGE -- V 300 CM -- ICP2 Collector Current (Pulse)1, ICP1 -- A 300 CM -- ICP3 IT14709 Maximum Capacitor, CM -- F Maximum Capacitor, CM -- F 250 250 200 Tc=25C Tc=70C 200 Tc=25C Tc=70C 150 150 100 100 50 0 VGE=3.3V VCE=320V 0 20 40 60 80 100 120 140 160 50 0 VGE=4V VCE=320V 0 20 40 60 80 100 120 140 160 Collector Current (Pulse)2, ICP2 -- A IT14710 Collector Current (Pulse)3, ICP3 -- A IT14711 No. A1480-4/5 TIG062E8 Note : TIG062E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice. PS No. A1480-5/5 |
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