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| APTDR90X1601G 3 Phase rectifier bridge Power Module 1 2 VRRM = 1600V IC = 90A @ Tc = 80C Application 7 8 9 10 11 12 * * Input rectifiers for inverter Battery DC power supply Features * * * * High blocking voltage High surge current Low leakage current Very low stray inductance - Symmetrical design High level of integration 5 6 * Benefits * * * * Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low profile RoHS compliant All multiple inputs and outputs must be shorted together 1/2 ; 5/6 ; 7/8 ; 9/10 ; 11/12 Absolute maximum ratings Symbol VR VRRM IF IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current Max ratings 1600 t=10ms TC = 80C TJ = 45C 90 850 Unit V A March, 2008 1-3 APTDR90X1601G - Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTDR90X1601G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IR VF VT rT Reverse Current Forward Voltage On - state Voltage On - state Slope resistance Test Conditions VR = 1600V IF = 90A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 50 4 1.3 1.1 0.8 4.8 Max Unit A mA V V m Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 3500 -40 -40 -40 2.5 Typ Max 0.85 150 125 100 4.7 80 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 2-3 APTDR90X1601G - Rev 1 March, 2008 APTDR90X1601G Typical Performance Curve Forward Characteristic 180 150 IFSM (A) 120 IF (A) 90 60 TJ=25C TJ=125C Non-Repetitive Forward Surge Current 1000 800 600 400 200 0 0.01 t (s) TJ=125C TJ=45C 30 0 0.0 0.4 0.8 VF (V) 1.2 1.6 2.0 50Hz 80% VRRM 0.1 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.3 0.2 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 0.5 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDR90X1601G - Rev 1 March, 2008 |
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