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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION *High DC current gain *Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) *Complement to type PMD1701K APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 60 UNIT V Collector Current -Continuous Collector Current-Peak Base Current ww w PARAMETER scs .i 60 5.0 20 40 0.5 180 150 -65~200 .cn mi e V V A A A PC Tj Tstg Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature W THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 0.97 UNIT /W ThermalResistance, Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1601K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2k 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.8 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 3V 2.8 V ICER Collector Cutoff current VCE= 60V; RBE=2.2K IEBO Emitter Cut-off current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance w w scs .i w VEB= 5V; IC= 0 IC= 10A; VCE= 3V .cn mi e 7.0 mA 3.0 mA 750 20000 IC= 7A; VCE= 3V, f= 1kHz 4 MHz IE= 0; VCB= 10V; ftest= 1.0MHz 400 pF isc Websitewww.iscsemi.cn 2 |
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