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| ECO-PAC 2 TM IGBT Module Sixpack Preliminary Data Sheet S9 L9 N5 A5 A1 F3 G1 PSII 24/06* IC25 = 19 A VCES = 600 V VCE(sat)typ. = 1.9 V X18 W14 H5 K10 K12 N9 R5 D5 C1 K13 PSII 24/06* *NTC optional IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 82 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 720 V; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 600 20 19 14 20 VCES 10 73 s W V V A A A Features * * * Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 2.7 100 35 35 230 30 0.4 0.3 600 39 3.4 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.7 K/W K/W * * * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching FRED diodes - fast reverse recovery - low forward voltage Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate UL registered, E 148688 VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 10 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.35 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C Applications AC drives power supplies with power factor correction Advantages VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 10 A VGE = 15 V; RG = 82 * * * * * Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 10 A (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 21 14 A A Package style and outline Dimensions in mm (1mm = 0.0394") Symbol VF IRM trr RthJC RthJH Conditions IF = 10 A; TVJ = 25C TVJ = 125C IF = 10 A; diF/dt = -400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Characteristic Values min. typ. max. 1.9 1.4 11 80 7.0 2.1 V V A ns 3.5 K/W K/W Data according to IEC 60747 and refer to a single diode unless otherwise stated. Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Component Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz; t = 1 s Mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 IGBT 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 IGBT Transient thermal resistance junction to heatsink 10 (ZthJH is measured using 50 m thermal grease) 1 IGBT ZthJH [K/W] D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 100 t (s) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 Diode 30 A 25 IF 20 15 10 5 0 0.0 TVJ=150C TVJ=100C TVJ= 25C 1.4 T = 100C nC VJ V = 300V 1.2 R Qr 1.0 0.8 0.6 0.4 0.2 0.0 100 IRM 40 TVJ= 100C A VR = 300V 30 IF= 20A IF= 10A IF= 5A IF= 20A IF= 10A IF= 5A 20 10 0.5 1.0 1.5 VF 2.0 V 2.5 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt Forward current IF versus VF Reverse recovery charge Qr versus -diF/dt 120 ns 110 100 IF= 20A IF= 10A IF= 5A TVJ= 100C VR = 300V Peak reverse current IRM versus -diF/dt 20 V VFR 15 t fr V FR 2.0 1.2 s 0.9 tfr 1.5 Kf 1.0 IRM trr 90 80 10 0.6 0.5 Qr 5 TVJ= 100C IF = 10A 0.3 70 0.0 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.0 600 A/s 1000 800 diF/dt 8-06A Dynamic parameters Qr, IRM versus TVJ Recovery time trr versus -diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 Transient thermal resistance junction to heatsink (ZthJH is measured using 50 m thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fred ZthJH[K/W] 0.1 0.01 0.001 t(s) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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