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| LED - Chip Preliminary Radiation Infrared Type DDH 10.04.2007 Technology AlGaAs/AlGaAs EL-740-21 rev. 01/06 Electrodes N (cathode) up 1000 typ. dimensions (m) typ. thickness 150 (25) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m dotted, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage2 Reverse voltage Radiant power1 Radiant power2 Peak wavelength1 Spectral bandwidth at 50% Switching time 1 2 1000 Symbol Min Typ Max Unit IF = 20 mA IF = 300 mA IR = 10 A IF = 300 mA IF = 300 mA IF = 20 mA IF = 20 mA IF = 20 mA VF VF VR e e P 0.5 tr, tf 730 5 9.5 1.7 2.0 1.9 V V V 12 24 740 35 50 750 mW mW nm nm ns Measured on bare chip on TO-18 header Measured on epoxy covered chip on TO-18 header in copper heat sink (for information only) Note: All measurements carried out with EPIGAP equipment Labeling Type EL-740-21 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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