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HAT1069C N5819 B9409 AME8812 S1000 74HCXX 2M100 PT27115
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  Datasheet File OCR Text:
 LED - Chip
Preliminary Radiation Deep red Type solderable 10.04.2007 Technology AlGaAs/GaAs
EL-685-21-15
rev. 01/07 Electrodes N (cathode) up
1000
typ. dimensions (m)
typ. thickness 260 (20) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m
PoC-05
Optical and Electrical Characteristics
Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage Reverse voltage Radiant power Radiant power1 Peak wavelength Spectral bandwidth at 50% Switching time
1
1000
Symbol
Min
Typ
Max
Unit
IF = 20 mA IF = 300 mA IR = 100 A IF = 20 mA IF = 300 mA IF = 300 mA IF = 300 mA IF = 100 mA
VF VF VR e e p 0.5 tr, tf 5 0.75 18 685
1.7 2.0
2.0 2.4
V V V
1.0 24 700 40 40/30 710
mW mW nm nm ns
Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type EL-685-21-15 Lot N e(typ) [mW] VF(typ) [V] Quantity
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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