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| BCW68 PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM -IB -IBM Ptot Tj TS Value 60 45 5 800 1 100 200 200 150 - 55 to + 150 Unit V V V mA A mA mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 06/03/2007 BCW68 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 100 A at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 100 mA at -VCE = 2 V, -IC = 500 mA F G H F G H F G H F G H Symbol hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VCE(sat) -VBE(sat) -VBE(sat) fT Cob Ceb Min. 35 50 80 75 120 180 100 160 250 35 60 100 60 45 5 Typ. 200 6 60 Max. 250 400 630 20 20 0.3 0.7 1.25 2 Unit nA nA V V V V V V V MHz pF pF Collector Cutoff Current at -VCB = 45 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 A Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 A Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Transition Frequency at -VCE = 5 V, -IC = 50 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz Emitter Base Capacitance at -VBE = 0.5 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 06/03/2007 |
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