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 DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZTA92 PNP high-voltage transistor
Product specification Supersedes data of 1997 May 22 1999 Apr 14
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES * Low current (max. 100 mA) * High voltage (max. 300 V). APPLICATIONS * Video equipment * Telephony * Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT223 plastic package. NPN complement: PZTA42.
1 Top view 2 3
MAM288
PZTA92
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
handbook, halfpage
4
2, 4 1 3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -300 -300 -5 -100 -200 -100 1.2 +150 150 +150 UNIT V V V mA mA mA W C C C
1999 Apr 14
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 104 23
PZTA92
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -200 V IC = 0; VBE = -5 V IC = -1 mA; VCE = -10 V; note 1 IC = -10 mA; VCE = -10 V; note 1 IC = -30 mA; VCE = -10 V; note 1 VCEsat VBEsat Cc fT Note 1. Pulse test: tp 300 s; 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC = -20 mA; IB = -2 mA IC = -20 mA; IB = -2 mA IE = 0; VCB = -20 V; f = 1 MHz IC = -10 mA; VCE = -20 V; f = 100 MHz - - 25 40 25 - - - 50 MIN. MAX. -20 -100 - - - -500 -900 6 - mV mV pF MHz UNIT nA nA
1999 Apr 14
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
PZTA92
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
1999 Apr 14
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
PZTA92
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 14 5 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 115002/00/03/pp6 Date of release: 1999 Apr 14 Document order number: 9397 750 05643


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PZTA92T1G
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onsemi Transistor, Pnp, 300V, 0.5A, Sot223,reel; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-300V; Transition Frequency Ft:50Mhz; Power Dissipation Pd:1.5W; Dc Collector Current:-50Ma; Dc Current Gain Hfe:40Hfe; Transistor Rohs Compliant: Yes |Onsemi PZTA92T1G 70000: USD0.116
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PZTA92T1G
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BuyNow
34000
PZTA92T1G
onsemi PZT Series 300 V 50 mA SMT PNP Silicon Transistor - SOT-223 1000: USD0.1774
3000: USD0.1642
BuyNow
3000
NSVPZTA92T3G
onsemi 4000: USD0.1984
244000: USD0.1836
BuyNow
244000

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
PZTA92
NXP Semiconductors RFQ
829
PZTA92
MFG UPON REQUEST RFQ
543
PZTA92
Fairchild Semiconductor Corporation RFQ
56491
PZTA92
Philips Semiconductors RFQ
2099
PZTA92,115
MFG UPON REQUEST RFQ
70080

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
PZTA92
Fairchild Semiconductor Corporation PZTA92 RFQ
0
PZTA92,115
Nexperia PZTA92,115 RFQ
0
PZTA92T1
onsemi PZTA92T1 RFQ
0
PZTA92T1G
onsemi PZTA92T1G RFQ
0

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